05N06 Datasheet | Specifications & PDF Download

N N-CHANNEL IGBT R JT05N065RED/SED/FED/CED MAIN CHARACTERISTICS IC VCE Vcesat（Vge=15V） 6A 650V 1.6V Package   UPS APPLICATIONS  General

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N N-CHANNEL IGBT R JT05N065RAD MAIN CHARACTERISTICS IC 5A VCES 650V Vcesat-ty（p Vge=15V） 1.7V Package   PDP  UPS   FS , RoHS

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G050N06LL N-Channel Enhancement Mode Power MOSFET Description The G050N06LL uses advanced trench technology to provide excellent RDS(ON) , low gate

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N N-CHANNEL IGBT R JT05N065RED/SED/FED/CED MAIN CHARACTERISTICS IC VCE Vcesat（Vge=15V） 6A 650V 1.6V Package   UPS APPLICATIONS  General

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested 

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2EDL05 family 2EDL05x06xx family 600 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology •

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Features • Advanced Trench MOSFET Process Technology • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green

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N N-CHANNEL IGBT R JT05N065RED/SED/FED/CED MAIN CHARACTERISTICS IC VCE Vcesat（Vge=15V） 6A 650V 1.6V Package   UPS APPLICATIONS  General

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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N N-CHANNEL IGBT R JT05N065RED/SED/FED/CED MAIN CHARACTERISTICS IC VCE Vcesat（Vge=15V） 6A 650V 1.6V Package   UPS APPLICATIONS  General

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N N-CHANNEL IGBT R JT05N065RAD/VAD/SAD MAIN CHARACTERISTICS Package IC 5A VCES 650V Vcesat-ty（p Vge=15V） 1.7V   PDP  UPS APPLICATION

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N N-CHANNEL IGBT R JT05N065RAD/VAD/SAD MAIN CHARACTERISTICS Package IC 5A VCES 650V Vcesat-ty（p Vge=15V） 1.7V   PDP  UPS APPLICATION

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2EDL05 family 2EDL05x06xx family 600 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology •

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Features • Advanced Trench MOSFET Process Technology • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Availab

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead platin

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NPN NPN LOW Vce(sat) TRANSISTOR R BM05N06 MAIN CHARACTERISTICS Package IC VCEO PC 5A 60V 1.3W    APPLICATIONS  Switching and muting

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Features • Advanced Trench MOSFET Process Technology • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Availab

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() CRTD105N06L Trench N-MOSFET 60V, 8.5mΩ, 64A Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excell

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