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CE3512K2 - 12GHz Super Low Noise FET
RF Low Noise FET CE3512K2 12 GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION Super Low Noise and High Gain Hollow (Air Cavity) Plastic .AC3236W - 0.2GHz to 1GHz 4W Power Amplifier
AC3236W 0.2GHz to 1GHz 4W Power Amplifier Features 200~1000MHz Frequency Range 3.3V~5.0V Operation 32dB Gain 36dBm P1dB @VCC=5V 250mA Quiescent Curre.5021TR-E - 22GHz 1310nm DFB Transceiver
5021TR-E 22 GHz 1310 nm DFB Transceiver DATASHEET | NOVEMBER 2013 MICROWAVE Applications Radar Testing Signal Processing Phased Array Antenna.RFUV1003 - 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER
RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND I N/C N/C GND Q N/C 32 N/C GND LOIN G.CMD290 - 2GHz - 26GHz GaN Low Noise Amplifier
CMD290 ® 2-26 GHz GaN Low Noise Amplifier Product Overview The CMD290 is a wideband GaN MMIC distributed low noise amplifier die which operates fro.ADL6332 - 0.38GHz to 12GHz RxVGA
FEATURES ► Broadband RxVGA interfacing LNA and beamformer to RF ADC ► Operating frequency range: 0.38 GHz to 12 GHz, two product variants ► ADL6332-A:.NBB-X-K1 - CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
NBB-312 0 Typical Applications • Narrow and Broadband Commercial and Military Radio Designs • Linear and Saturated Amplifiers Product Description The .FMM5116X - 20-32Ghz Upconverter MMIC
( DataSheet : www.DataSheet4U.com ) FMM5116X 20-32GHz Upconverter MMIC FEATURES • • • • Integrated Monolithic Upconverter High Linearity Single Supp.FMM5117X - 20-32Ghz Downconverter MMIC
( DataSheet : www.DataSheet4U.com ) FMM5117X 20-32GHz Downconverter MMIC FEATURES • • • • Integrated Monolithic Downconverter High Linearity Single .LMH6703 - 1.2Ghz Low Distortion Op Amp
www.DataSheet4U.com LMH6703 1.2 GHz, Low Distortion Op Amp with Shutdown May 2005 LMH6703 1.2 GHz, Low Distortion Op Amp with Shutdown General Desc.TC2623 - 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor
TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Tr.RFPA2226 - 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features P1dB=33.5dBm at 5V, 2.4GHz 802.LTC5548 - 2GHz to 14GHz Microwave Mixer
Features nn Upconversion or Downconversion nn High IIP3: +24.4dBm at 5.8GHz +21.4dBm at 9GHz nn 7.1dB Conversion Loss at 5.8GHz nn +15.2dBm Input P1.TGA2578 - 2GHz - 6GHz 30W GaN Power Amplifier
® General Description Qorvo’s TGA2578 is a wideband power amplifier fabricated on Qorvo’s 0.25 um GaN on SiC process. Operating from 2 to 6 GHz, it ac.CHM1291 - 25-32GHz Single Side Band Mixer
CHM1291 25-32GHz Single Side Band Mixer GaAs Monolithic Microwave IC Description The CHM1291 is a multifunction chip (MFC) which integrates a LO buffe.CE3514M4 - 12GHz Low Noise FET
RF Low Noise FET CE3514M4 12GHz LoEwnteNroaiSsheoFrtEDTociunmDeunta/TlitMleoNladmPelHaesrteic PKG DESCRIPTION Low Noise and High Gain Original Du.BFR92P - NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)
BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • C.HM6C5332 - HM6C5332 - 1.2GHz/250MHz Dual Frequency Synthesizer
PRELIMINARY HM6C5332 HM6C5332 – 1.2GHz/250MHz Dual Frequency Synthesizer Features Description The HM6C5332 of full CMOS monolithic, du.