.
A-3570Y - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.MJE350 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ I.D357 - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD357 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CE.T3035H-8G - Thyristor
isc Thyristors INCHANGE Semiconductor T3035H-8G DESCRIPTION ·With TO-263( D2PAK ) packaging ·Operating in 4 quadrants ·High commutation capability ·.I2SK3564 - N-Channel MOSFET
iscN-Channel MOSFET Transistor 2SK3564,I2SK3564 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.7Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0.T835H-8F - Triac
isc Triacs T835H-8F FEATURES ·With TO-220F insulated package ·Suitable for general purpose AC switching. Which can be used as an ON/OFF function in .T435-600T - Thyristor
isc Thyristors T435-600T DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations fo.7N35 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 7N35 ·DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Volta.MT9V135 - 1/4-Inch System-On-A-Chip (SOC) VGA NTSC and PAL CMOS Digital Image Sensor
MT9V135: 1/4-Inch System-On-A-Chip (SOC) VGA Features www.DataSheet4U.com 1/4-Inch System-On-A-Chip (SOC) VGA NTSC and PAL CMOS Digital Image Sensor .K1358 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1358 DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Vo.MBR3035CT - Schottky Barrier Rectifier
Schottky Barrier Rectifier MBR3035CT FEATURES ·Schottky Barrier Chip ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency.K3568 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% ava.2SK3570-S - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3570-S FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-R.2SK350 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK350 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·10.C-3570G - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.C-3570SR - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.C-3570X - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.C-3570Y - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.A-3570H - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.2SC3518-Z - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot varia.