.
Inchange Semiconductor
44
MJE350 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ I.
INCHANGE
28
K1358 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1358 DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Vo.
INCHANGE
25
K3568 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% ava.
INCHANGE
24
BD135 - NPN Transistor
isc Silicon NPN Power Transistor BD135 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= .
ETC
20
A-3570SR - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.
INCHANGE
20
KSE350 - PNP Transistor
isc Silicon PNP Power Transistor KSE350 DESCRIPTION ·High Collector-Emitter breakdown voltage ·Low Collector Saturation Voltage ·Complement to Type .
ETC
19
A-3570Y - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.
Inchange Semiconductor
19
35N10 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 35N10 ·FEATURES ·Drain Current ID= 35A@ TC=25℃ ·Drain Source Voltag.
ETC
18
C-3570H - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.
ETC
18
C-3570Y - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.
ETC
18
A-3570E - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.
ETC
18
A-3570H - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.
INCHANGE
18
I2SK3564 - N-Channel MOSFET
iscN-Channel MOSFET Transistor 2SK3564，I2SK3564 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.7Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0.
INCHANGE
17
TIP35 - NPN Transistor
isc Silicon NPN Power Transistor TIP35 DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40.
INCHANGE
17
NJD35N04T4G - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-252(DPAK) packaging ·Reliable performance at higher powers ·Designed for inductive loads ·Fast .
INCHANGE
17
BD354 - PNP Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD354 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emit.
ETC
16
C-3570SR - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.
ETC
16
A-3570G - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.
ETC
15
C-3570E - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.
ETC
15
C-3570G - 1.2 INCH/ 5 X 7 DOT MATRIX DISPLAY
C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.