1.35-inch Datasheet | Specifications & PDF Download

C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ I

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C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1358 DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Vo

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C/A-3570X 1.2 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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iscN-Channel MOSFET Transistor 2SK3564，I2SK3564 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.7Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0

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isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% ava

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isc Silicon NPN Power Transistor BD135 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)=

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD357 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CE

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isc Silicon PNP Power Transistor KSE350 DESCRIPTION ·High Collector-Emitter breakdown voltage ·Low Collector Saturation Voltage ·Complement to Type

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isc Silicon NPN Power Transistor 2SC3550 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Re

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MT9V135: 1/4-Inch System-On-A-Chip (SOC) VGA Features www.DataSheet4U.com 1/4-Inch System-On-A-Chip (SOC) VGA NTSC and PAL CMOS Digital Image Sensor

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