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1.8-Inch Datasheet | Specifications & PDF Download

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3DD13009 - NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect
(111 views)
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3DD13009NL - NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo
(47 views)
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BTA08-600B - Triac

isc Triacs BTA08-600B FEATURES ·With TO-220AB insulated package ·Suitables for general purpose applications where gate high sensitivity is required.
(12 views)
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TIP3055 - NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta
(11 views)
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RJ1G08CGN - N-Channel MOSFET

isc N-Channel MOSFET Transistor RJ1G08CGN FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static Drain-Source On-Re
(10 views)
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RD3T100CN - N-Channel MOSFET

isc N-Channel MOSFET Transistor RD3T100CN FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-
(9 views)
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JCS2N60F - N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche
(8 views)
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TIP3055F - NPN Transistor

isc Silicon NPN Power Transistor isc Product Specification TIP3055F DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A
(7 views)
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NJW0281 - NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor NJW0281 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) ·Good Li
(7 views)
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BD159 - NPN Transistor

isc Silicon NPN Power Transistor BD159 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·DC Current Gain- : hFE = 30~240(M
(7 views)

1.8-Inch Distributor

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