10-Cell Datasheet | Specifications & PDF Download

www.cellwise-semi.com Features ÿOvercharge detection function • Threshold range 3.750V, 4.175V~4.450V, 25mV step, ± 25mV accuracyÿOverdischarge detect

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CS5310E 3AIC CS5310E 28V ， IC。 MOS， ， ， ， B O M 。 3 A ， ，90%。 C S 5 3 1 0 E

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AXP2101 Jun,24,2019 AXP2101 Single Cell NVDC PMU with E-gauge 1. Features  3.9V–5.5V Input Operating Range and Support single Cell Battery  Batter

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www.cellwise-semi.com CW1072-DS V1.0  • 3.750V、4.175V~4.450V，25mV ，± 25mV  • 2.100V~3.000V，100mV ， ± 30mV  • ， • ，  SEL 6 、7  PWM

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www.cellwise-semi.com CW1051-DS V2.2 CW1051 3~5 Channel Secondary Protection IC Features  3~5 Cells Application  Overcharge Protection • Threshol

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EBRP10300ST Excellen Schottky Barrier Rectifiers TO-220AC Primary Characteristics IF 10 A VRRM 300 V IFSM 150 A VF 0.95 V TJ max 175

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EBRP10L45T TO-277 Features ‧Schottky barrier diodes ‧Low forward voltage drop ‧Low leakage current ‧Moisture sensitivity: level 1, per J-STD-020 ‧So

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EBRP10200CD2 D2-PAK Features ‧Low Forward Voltage Drop ‧Excellent High Temperature Stability ‧Excellent Barrier Rectifier Technology ‧Soft, Fast Switc

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EBRT10E150CT TO-220AB Features ‧Low Forward Voltage Drop ‧Excellent High Temperature Stability ‧Excellent Barrier Rectifier Technology ‧Soft, Fast Sw

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EBRT3E100M Excellent Schottky Barrier Rectifiers DO-15 Primary Characteristics IF 3 A VRRM 100 V IFSM 80 A VF 0.6 V TJ max 150 °C F

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EBRT10L60D DO-201AD Features ‧Guardring for overvoltage protection ‧Very small conduction losses ‧Low forward voltage drop ‧Component in accordance t

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EBRP10E300CT TO-220AB Features ‧Low Forward Voltage Drop ‧Excellent High Temperature Stability ‧Excellent Barrier Rectifier Technology ‧Soft, Fast Swi

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EBRP10L200C Excellent Schottky Barrier Rectifiers DO-214AB(SMC) Primary Characteristics IF 10 A VRRM 200 V IFSM 15 A VF 0.9 V TJ max

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EBRT10L80C Excellent Schottky Barrier Rectifiers DO-214AB(SMC) Primary Characteristics IF 10 A VRRM 80 V IFSM 200 A VF 0.6 V TJ max 1

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EBRP10E200FCT ITO-220AB Features ‧Low Forward Voltage Drop ‧Excellent High Temperature Stability ‧Excellent Barrier Rectifier Technology ‧Soft, Fast S

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EBRP10L300CT TO-220AB Features ‧Low Forward Voltage Drop ‧Excellent High Temperature Stability ‧Excellent Barrier Rectifier Technology ‧Soft, Fast Swi

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EBRP10L250CD2 D2-PAK Features ‧Low Forward Voltage Drop ‧Excellent High Temperature Stability ‧Excellent Barrier Rectifier Technology ‧Soft, Fast Swi

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg

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