10.9W Datasheet | Specifications & PDF Download

HT876 10.9W×2   ・ ， ・ ・（PBTL） ・ABD ・THD+N: 0.02%（VDD = 8.4V, RL = 4Ω, fIN = 1kHz, Po = 2×1.0W, BTL） ・(fIN = 1kHz, THD+N = 10%) 2×10.9W (V

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Shenzhen Hot Display Technology Co.,Ltd 2022 03 11 TFT-H101A9 Rev:2-0 LCM Specification  Preliminary specification  Official specifications

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UMEC International Corporation UM1000W-4 SERIES 3 Watt DC/DC Converters ♦ Utilizes Surface Mount Technology ♦ 4:1 Input Range ♦ 7.5 Watts/Cubic Inch ♦

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DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File u

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UMEC International Corporation UM1000W-4 SERIES 3 Watt DC/DC Converters ♦ Utilizes Surface Mount Technology ♦ 4:1 Input Range ♦ 7.5 Watts/Cubic Inch ♦

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Automation Controls Catalog VDE Slim (7.2mm .283inch), 1 Form A 5A power relay LD-P RELAYS (ALDP) TYPICAL APPLICATIONS • Boilers • Air conditioner

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TP10AC ： 10W 4KVAC AC/DC TP10AC10W， （60mW），0.1mA，（50.8*25.4*15.3mm）， 4KV。，EMC ，EMC IEC/EN61000-4、 CISPR22/EN55022、UL60950/EN60950/EN60601， 、、， 。

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TP10AS Series DESCRIPTION： 10W 3KVAC Isolation Wide Input AC/DC Converters The rated output power of TP10AS converters is 10W with wide input volta

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M29W010B 1 Mbit (128Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ER

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M29W102BT M29W102BB 1 Mbit (64Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and R

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HSM109WK Silicon Schottky Barrier Diode for Battery Switch ADE-208-059C(Z) Rev 3 Features • The HSM109WK has two different (VF- IF) chips, and can c

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MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MM

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RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier RFHA1003 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrie

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HYDIS AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE HYDIS AND

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D Wide Operating Voltage Range of 2 V to 6 V D Low Input Current of 1 µA Max D High-Current Outputs Drive Up To 10 LSTTL Loads SN54HC109 . . . J OR W

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M29W102BT M29W102BB 1 Mbit (64Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and R

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RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier RFHA1006 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Ca

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF HYDIS AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF HYDIS AND MUST BE

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GRM033C80G104KE19# “#” indicates a package specification code. < List of part numbers with package codes > GRM033C80G104KE19D , GRM033C80G104KE19W ,

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GRM155R60J105KE19# “#” indicates a package specification code. < List of part numbers with package codes > GRM155R60J105KE19D , GRM155R60J105KE19W ,

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