BF1109WR - N-channel dual-gate MOS-FETs

NXP

BF1109WR Datasheet Preview — Preview of BF1109WR PDF

Datasheet Details

Part number	BF1109WR
Manufacturer	NXP ↗
File Size	145.41 KB
Description	N-channel dual-gate MOS-FETs
Datasheet	BF1109WR_PhilipsSemiconductors.pdf

BF1109WR Product details

Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1109R marking code: NBp.Fig.2 Simplified outline (SOT143R).fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.Integrated diodes between gates and source protect against excessive input voltage surges.The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.QUICK REFERENCE DATA SYMBOL VDS

Features

Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Other Datasheets by NXP

BF1109 - N-channel dual-gate MOS-FETs
BF1109R - N-channel dual-gate MOS-FETs
BF1100 - Dual-gate MOS-FETs
BF1100R - Dual-gate MOS-FETs
BF1100WR - Dual-gate MOS-FET
BF1101 - N-channel dual-gate MOS-FETs

Published: Mar 23, 2005 |