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BF1109WR

N-channel dual-gate MOS-FETs

BF1109WR Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS

BF1109WR General Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1109R marking code: NBp. Fig.2 Simplified outline (SOT143R). fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and sour.

BF1109WR Datasheet (145.41 KB)

Preview of BF1109WR PDF

Datasheet Details

Part number:

BF1109WR

Manufacturer:

NXP ↗

File Size:

145.41 KB

Description:

N-channel dual-gate mos-fets.
DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product speciļ¬cation Supersedes data of 1997 Sep 03 File u.

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TAGS

BF1109WR N-channel dual-gate MOS-FETs NXP

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