BF1109R

N-channel dual-gate MOS-FETs

NXP

BF1109R Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS

BF1109R General Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1109R marking code: NBp. Fig.2 Simplified outline (SOT143R). fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and sour.

BF1109R Datasheet (145.41 KB)

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Datasheet Details

Part number:

BF1109R

Manufacturer:

NXP ↗

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145.41 KB

Description:

N-channel dual-gate mos-fets.
DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product speciﬁcation Supersedes data of 1997 Sep 03 File u.

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BF1109R N-channel dual-gate MOS-FETs NXP

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BF1109R Features

BF1109R General Description

Datasheet Details

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