.
Elpida Memory
EDJ4204EFBG - 1024M words x 4 bits 4G bits DDR3L SDRAM
COVER PRELIMINARY DATA SHEET 4G bits DDR3L SDRAM EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 b.
Nanya
NT5CC1024M4CN - 4Gb DDR3 SDRAM C-Die
4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Feature VDD = VDDQ = 1.5V ± 0.075V (.
Elisra
MEF64M16G150M3ND - 1024Mbit 3.3V - NAND Flash Memory Module
MEF64M16XX50X3ND 1024Mbit 3.3V – NAND Flash Memory Module 64MX16 3.3V NAND Flash Memory Module Features q 3.3V±10% Supply/ Programming q Access Time.
Hanbit Electronics
HDD128M72D18RPW - DDR SDRAM Module 1024Mbyte
HANBit HDD128M72D18RPW DDR SDRAM Module 1024Mbyte (128Mx72bit), based on 64Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register Part No. HDD128M72D1.
Nanya
NT5CB1024M4BN - 4Gb DDR3 SDRAM B-Die
4Gb DDR3 SDRAM B-Die NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP Feature VDD = VDDQ = 1.5V ± 0.075V (.
Nanya
NT5CC1024M4BN - 4Gb DDR3 SDRAM B-Die
4Gb DDR3 SDRAM B-Die NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP Feature VDD = VDDQ = 1.5V ± 0.075V (.
Nanya
NT5CB1024M4CN - 4Gb DDR3 SDRAM C-Die
4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Feature VDD = VDDQ = 1.5V ± 0.075V (.
Elisra
MEF64M16G750I3ND - 1024Mbit 3.3V - NAND Flash Memory Module
MEF64M16XX50X3ND 1024Mbit 3.3V – NAND Flash Memory Module 64MX16 3.3V NAND Flash Memory Module Features q 3.3V±10% Supply/ Programming q Access Time.
Elisra
MEF64M16G750M3ND - 1024Mbit 3.3V - NAND Flash Memory Module
MEF64M16XX50X3ND 1024Mbit 3.3V – NAND Flash Memory Module 64MX16 3.3V NAND Flash Memory Module Features q 3.3V±10% Supply/ Programming q Access Time.
Elisra
MEF64M16G150I3ND - 1024Mbit 3.3V - NAND Flash Memory Module
MEF64M16XX50X3ND 1024Mbit 3.3V – NAND Flash Memory Module 64MX16 3.3V NAND Flash Memory Module Features q 3.3V±10% Supply/ Programming q Access Time.
Toshiba
TH58NVG3D4BTG00 - 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM
TOSHIBA CONFIDENTIAL TH58NVG3D4BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1024M × 8 BIT) CMOS NAND E2PROM (Mu.
Microchip
PIC32MK1024MCF064 - 32-bit General Purpose and Motor Control Application MCU
PIC32MK GENERAL PURPOSE AND MOTOR CONTROL (GPG/MCJ) WITH CAN FD FAMILY 32-bit General Purpose and Motor Control Application MCUs with CAN FD, FPU, ECC.
Microchip
PIC32MK1024MCF100 - 32-bit General Purpose and Motor Control Application MCU
PIC32MK GENERAL PURPOSE AND MOTOR CONTROL (GPG/MCJ) WITH CAN FD FAMILY 32-bit General Purpose and Motor Control Application MCUs with CAN FD, FPU, ECC.
Lattice Semiconductor
ISPXPLD51024MX - eXpanded Programmable Logic Device XPLD
DISSECLOENCTTINDUEEVIDCES ispXPLDTM 5000MX Family 3.3V, 2.5V and 1.8V In-System Programmable eXpanded Programmable Logic Device XPLD™ Family Februa.
Micron
MT53B1024M32D4 - Mobile LPDDR4 SDRAM
Micron Confidential and Proprietary Preliminary‡ 200b: x32 Mobile LPDDR4 SDRAM Features Mobile LPDDR4 SDRAM MT53B256M32D1, MT53B512M32D2, MT53B1024.