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TH58NVG3D4BTG00 - 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM

TH58NVG3D4BTG00 Description

TOSHIBA CONFIDENTIAL TH58NVG3D4BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1024M × 8 BIT) CMOS NAND E2PROM (Mu.
The TH58NVG3D4B is a single 3.

TH58NVG3D4BTG00 Features

* Organization Memory cell array Register Page size Block size TH58NVG3D4B 2112 × 256K × 8 × 2 2112 × 8 2112 bytes (256K + 8K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read
* Mode control Serial input/output Command control
* Number o

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GBIT 1024M BIT CMOS NAND E2PROM Toshiba
Toshiba TH58NVG3D4BTG00-like datasheet