TH58NVG3D4BTG00 Datasheet - Toshiba

TH58NVG3D4BTG00 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM

The TH58NVG3D4B is a single 3.3 V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 128 pages × 4096blocks. The device has a 2112-byte static register which allow program and read data to be transferred between th.

TH58NVG3D4BTG00 Features

* Organization Memory cell array Register Page size Block size TH58NVG3D4B 2112 × 256K × 8 × 2 2112 × 8 2112 bytes (256K + 8K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read

* Mode control Serial input/output Command control

* Number o

TH58NVG3D4BTG00-Toshiba.pdf