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TH58NVG3S0HTA00

8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

TH58NVG3S0HTA00 Features

* Organization x8 Memory cell array 4352 × 128K × 8 × 2 Register 4352 × 8 Page size 4352 bytes Block size (256K + 16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page

TH58NVG3S0HTA00 General Description

The TH58NVG3S0HTA00 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 4096blocks. The device has two 4352-byte static registers which allow program and read data to be transferred betwe.

TH58NVG3S0HTA00 Datasheet (853.78 KB)

Preview of TH58NVG3S0HTA00 PDF

Datasheet Details

Part number:

TH58NVG3S0HTA00

Manufacturer:

Toshiba ↗

File Size:

853.78 KB

Description:

8 gbit (1g x 8 bit) cmos nand e2prom.

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TAGS

TH58NVG3S0HTA00 GBIT BIT CMOS NAND E2PROM Toshiba

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