TH58NVG2S3BTG00 Datasheet - Toshiba

TH58NVG2S3BTG00 4-Gbit CMOS NAND EPROM

Lead-Free The TH58NVG2S3B is a single 3.3 V 4Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096 blocks. The device has a 2112-byte static register which allow program and read data to be transferred .

TH58NVG2S3BTG00 Features

* Organization TH58NVG2S3B 2112 × 128K × 8 × 2 2112 × 8 2112 bytes (128K + 4K) bytes Memory cell array www.DataSheet4U.com Register Page size Block size

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output Command control N

TH58NVG2S3BTG00_Toshiba.pdf