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TH58NVG3S0HBAI6 - 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM

TH58NVG3S0HBAI6 Description

TH58NVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND E2PROM .
The TH58NVG3S0HBAI6 is a single 3.

TH58NVG3S0HBAI6 Features

* Organization x8 Memory cell array 4352  128K  8  2 Register 4352  8 Page size 4352 bytes Block size (256K  16K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

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8G-BIT BIT CMOS NAND E2PROM Toshiba
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