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TH58NVG3S0HBAI6 Datasheet - Toshiba

TH58NVG3S0HBAI6 - 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM

The TH58NVG3S0HBAI6 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks. The device has two 4352-byte static registers which allow program and read data to be transferred betwe.

TH58NVG3S0HBAI6 Features

* Organization x8 Memory cell array 4352  128K  8  2 Register 4352  8 Page size 4352 bytes Block size (256K  16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TH58NVG3S0HBAI6-Toshiba.pdf

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Datasheet Details

Part number:

TH58NVG3S0HBAI6

Manufacturer:

Toshiba ↗

File Size:

719.67 KB

Description:

8g-bit (1g x 8 bit) cmos nand e2prom.

TH58NVG3S0HBAI6 Distributor

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TH58NVG3S0HBAI6 8G-BIT BIT CMOS NAND E2PROM Toshiba