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TH58NVG3S0HBAI6

8G-BIT (1G x 8 BIT) CMOS NAND E2PROM

TH58NVG3S0HBAI6 Features

* Organization x8 Memory cell array 4352  128K  8  2 Register 4352  8 Page size 4352 bytes Block size (256K  16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TH58NVG3S0HBAI6 General Description

The TH58NVG3S0HBAI6 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks. The device has two 4352-byte static registers which allow program and read data to be transferred betwe.

TH58NVG3S0HBAI6 Datasheet (719.67 KB)

Preview of TH58NVG3S0HBAI6 PDF

Datasheet Details

Part number:

TH58NVG3S0HBAI6

Manufacturer:

Toshiba ↗

File Size:

719.67 KB

Description:

8g-bit (1g x 8 bit) cmos nand e2prom.

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TAGS

TH58NVG3S0HBAI6 8G-BIT BIT CMOS NAND E2PROM Toshiba

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