Datasheet4U Logo Datasheet4U.com

TH58NVG3S0HBAI6 Datasheet - Toshiba

TH58NVG3S0HBAI6 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM

The TH58NVG3S0HBAI6 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks. The device has two 4352-byte static registers which allow program and read data to be transferred betwe.

TH58NVG3S0HBAI6 Features

* Organization x8 Memory cell array 4352  128K  8  2 Register 4352  8 Page size 4352 bytes Block size (256K  16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TH58NVG3S0HBAI6 Datasheet (719.67 KB)

Preview of TH58NVG3S0HBAI6 PDF
TH58NVG3S0HBAI6 Datasheet Preview Page 2 TH58NVG3S0HBAI6 Datasheet Preview Page 3

Datasheet Details

Part number:

TH58NVG3S0HBAI6

Manufacturer:

Toshiba ↗

File Size:

719.67 KB

Description:

8g-bit (1g x 8 bit) cmos nand e2prom.

📁 Related Datasheet

TH58NVG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG3S0HTA00 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG3S0HTAI0 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG3D4BTG00 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG1S3AFT05 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)

TH58NVG2S3BTG00 4-Gbit CMOS NAND EPROM (Toshiba)

TH58NVG4S0FBAID 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG4S0FTA20 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM (Toshiba Semiconductor)

TAGS

TH58NVG3S0HBAI6 8G-BIT BIT CMOS NAND E2PROM Toshiba

TH58NVG3S0HBAI6 Distributor