TH58NVG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

Toshiba

Description

TH58NVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND E2PROM .
The TH58NVG3S0HBAI4 is a single 3.

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Datasheet Specifications

Part number: TH58NVG3S0HBAI4
Manufacturer: Toshiba ↗
File Size: 715.94 KB
Datasheet: TH58NVG3S0HBAI4-Toshiba.pdf
Description: 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

Features

* Organization Memory cell array Register Page size Block size x8 4352  128K  8  2 4352  8 4352 bytes (256K  16K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
* Mode

TH58NVG3S0HBAI4 Distributors

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GBIT BIT CMOS NAND E2PROM Toshiba

Toshiba TH58NVG3S0HBAI4-like datasheet