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TH58NVG4S0FTA20

16 GBIT (2G x 8 BIT) CMOS NAND E2PROM

TH58NVG4S0FTA20 Features

* Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Pag

TH58NVG4S0FTA20 General Description

The TH58NVG4S0F is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks. The device has two 4328-byte static registers which allow program and read data to be transferred betwee.

TH58NVG4S0FTA20 Datasheet (935.20 KB)

Preview of TH58NVG4S0FTA20 PDF

Datasheet Details

Part number:

TH58NVG4S0FTA20

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

935.20 KB

Description:

16 gbit (2g x 8 bit) cmos nand e2prom.

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TH58NVG4S0FTA20 GBIT BIT CMOS NAND E2PROM Toshiba Semiconductor

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