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TH58NVG4S0HTAK0

16G-BIT (2G x 8 BIT) CMOS NAND E2PROM

TH58NVG4S0HTAK0 Features

* Organization x8 Memory cell array 4352  128K  8  4 Register 4352  8 Page size 4352 bytes Block size (256K  16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TH58NVG4S0HTAK0 General Description

The TH58NVG4S0HTAK0 is a single 3.3V 16 Gbit (18,253,611,008 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  8192blocks. The device has two 4352-byte static registers which allow program and read data to be transferred bet.

TH58NVG4S0HTAK0 Datasheet (898.08 KB)

Preview of TH58NVG4S0HTAK0 PDF

Datasheet Details

Part number:

TH58NVG4S0HTAK0

Manufacturer:

Toshiba ↗

File Size:

898.08 KB

Description:

16g-bit (2g x 8 bit) cmos nand e2prom.

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TH58NVG4S0HTAK0 16G-BIT BIT CMOS NAND E2PROM Toshiba

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