Part number:
TH58100FTI
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
495.96 KB
Description:
Tentative toshiba mos digital integrated circuit silicon gate cmos.
TH58100FTI_ToshibaSemiconductor.pdf
Datasheet Details
The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks.
The device has a 528-byte static register which allows program and read data to be transferred between the register and
TH58100FTI Features
* Organization Memory cell allay 528 × 128K × 8 × 2 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Multi Block Program, Multi Block Erase Mode control Serial input/output Command control
TH58100FTI_ToshibaSemiconductor.pdf
Datasheet Details
TH58100FTI
Toshiba ↗ Semiconductor
495.96 KB
Tentative toshiba mos digital integrated circuit silicon gate cmos.
📁 Related Datasheet
📌 All Tags