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TH58BYG3S0HBAI4 Datasheet - Toshiba

TH58BYG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

The TH58BYG3S0HBAI4 is a single 1.8V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has a 4224-byte static register which allows program and read data to be transferred between.

TH58BYG3S0HBAI4 Features

* Organization x8 Memory cell array 4224 × 128K × 8 × 2 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status R

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Datasheet Details

Part number:

TH58BYG3S0HBAI4

Manufacturer:

Toshiba ↗

File Size:

678.51 KB

Description:

8 gbit (1g x 8 bit) cmos nand e2prom.

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TH58BYG3S0HBAI4 TH58BYG3S0HBAI4 GBIT BIT CMOS NAND E2PROM Toshiba

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