Datasheet Details
- Part number
- TH58BVG3S0HBAI6
- Manufacturer
- Toshiba ↗
- File Size
- 697.68 KB
- Datasheet
- TH58BVG3S0HBAI6-Toshiba.pdf
- Description
- 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM
TH58BVG3S0HBAI6 Description
TH58BVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM .
The TH58BVG3S0HBAI6 is a single 3.
TH58BVG3S0HBAI6 Features
* Organization
x8
Memory cell array 4224 × 128K × 8 × 2
Register
4224 × 8
Page size
4224 bytes
Block size
(256K + 8K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status R
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