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TH58BVG3S0HBAI6 - 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM

TH58BVG3S0HBAI6 Description

TH58BVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM .
The TH58BVG3S0HBAI6 is a single 3.

TH58BVG3S0HBAI6 Features

* Organization x8 Memory cell array 4224 × 128K × 8 × 2 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status R

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8G-BIT BIT CMOS NAND E2PROM Toshiba
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