Datasheet4U Logo Datasheet4U.com

TH58BVG3S0HBAI6

8G-BIT (1G x 8 BIT) CMOS NAND E2PROM

TH58BVG3S0HBAI6 Features

* Organization x8 Memory cell array 4224 × 128K × 8 × 2 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status R

TH58BVG3S0HBAI6 General Description

The TH58BVG3S0HBAI6 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has a 4224-byte static register which allows program and read data to be transferred between.

TH58BVG3S0HBAI6 Datasheet (697.68 KB)

Preview of TH58BVG3S0HBAI6 PDF

Datasheet Details

Part number:

TH58BVG3S0HBAI6

Manufacturer:

Toshiba ↗

File Size:

697.68 KB

Description:

8g-bit (1g x 8 bit) cmos nand e2prom.

📁 Related Datasheet

TH58BVG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58BVG3S0HTA00 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58BVG3S0HTAI0 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58BVG2S3HBAI4 4-GBIT (512M x 8-BIT) CMOS NAND E2PROM (Toshiba)

TH58BYG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58100FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)

TH58100FTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)

TH58NVG1S3AFT05 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)

TH58NVG2S3BTG00 4-Gbit CMOS NAND EPROM (Toshiba)

TH58NVG3D4BTG00 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TAGS

TH58BVG3S0HBAI6 8G-BIT BIT CMOS NAND E2PROM Toshiba

Image Gallery

TH58BVG3S0HBAI6 Datasheet Preview Page 2 TH58BVG3S0HBAI6 Datasheet Preview Page 3

TH58BVG3S0HBAI6 Distributor