TH58100FT Datasheet, Cmos, Toshiba Semiconductor

TH58100FT Features

  • Cmos
  • Organization Memory cell allay 528 ´ 128K ´ 8 ´ 2 Register 528 ´ 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Stat

PDF File Details

Part number:

TH58100FT

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

421.77kb

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📄 Datasheet

Description:

Tentative toshiba mos digital integrated circuit silicon gate cmos. The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) o

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TH58100FT Application

  • Applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non

TAGS

TH58100FT
TENTATIVE
TOSHIBA
MOS
DIGITAL
INTEGRATED
CIRCUIT
SILICON
GATE
CMOS
Toshiba Semiconductor

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