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TH58100FT

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TH58100FT Features

* Organization Memory cell allay 528 ´ 128K ´ 8 ´ 2 Register 528 ´ 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Multi Block Program, Multi Block Erase Mode control Serial input/output Command control

TH58100FT General Description

The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes ´ 32 pages ´ 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and.

TH58100FT Datasheet (421.77 KB)

Preview of TH58100FT PDF

Datasheet Details

Part number:

TH58100FT

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

421.77 KB

Description:

Tentative toshiba mos digital integrated circuit silicon gate cmos.

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TAGS

TH58100FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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