Datasheet Specifications
- Part number
- TH58NVG1S3AFT05
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 368.77 KB
- Datasheet
- TH58NVG1S3AFT05_ToshibaSemiconductor.pdf
- Description
- TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Description
TH58NVG1S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2GBIT (256M u 8BITS) CMOS NAND E2PROM .
Features
* x Organization Memory cell allay 2112 u 64K u 8 u 2 Register 2112 u 8 Page size 2112bytes Block size (128K 4K) bytes x Modes ReadResetAuto Page Program Auto Block EraseStatus Read x Mode control Serial inputoutput Command control x Powersupply x Program/Erase Cycles x Access time Cell arrayTH58NVG1S3AFT05 Distributors
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