TH58NVG1S3AFT05 Datasheet - Toshiba Semiconductor

TH58NVG1S3AFT05, TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TH58NVG1S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2GBIT (256M u 8BITS) CMOS NAND E2PROM .
The TH58NVG1S3A is a single 3.

datasheet Preview Page 1 from Datasheet4u.com

TH58NVG1S3AFT05_ToshibaSemiconductor.pdf

TH58NVG1S3AFT05 Datasheet Preview — Preview of TH58NVG1S3AFT05 PDF

Datasheet Details

Part number:

TH58NVG1S3AFT05

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

368.77 KB

Description:

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Features

* x Organization Memory cell allay 2112 u 64K u 8 u 2 Register 2112 u 8 Page size 2112bytes Block size (128K 4K) bytes x Modes ReadResetAuto Page Program Auto Block EraseStatus Read x Mode control Serial inputoutput Command control x Powersupply x Program/Erase Cycles x Access time Cell array

TH58NVG1S3AFT05 Distributors

📁 Related Datasheet

TH58NVG2S3BTG00 TH58NVG3D4BTG00 TH58NVG3S0HBAI4 TH58NVG3S0HBAI6 TH58NVG3S0HTA00 TH58NVG3S0HTAI0

📌 All Tags

TH58NVG1S3AFT05 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

Toshiba Semiconductor TH58NVG1S3AFT05-like datasheet