Part number:
TH58NVG1S3AFT05
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
368.77 KB
Description:
Toshiba mos digital integrated circuit silicon gate cmos.
TH58NVG1S3AFT05_ToshibaSemiconductor.pdf
Datasheet Details
The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks.
The device has a 2112-byte static registers which allow program and read data to be transferred between the
TH58NVG1S3AFT05 Features
* x Organization Memory cell allay 2112 u 64K u 8 u 2 Register 2112 u 8 Page size 2112bytes Block size (128K 4K) bytes x Modes ReadResetAuto Page Program Auto Block EraseStatus Read x Mode control Serial inputoutput Command control x Powersupply x Program/Erase Cycles x Access time Cell array
TH58NVG1S3AFT05_ToshibaSemiconductor.pdf
Datasheet Details
TH58NVG1S3AFT05
Toshiba ↗ Semiconductor
368.77 KB
Toshiba mos digital integrated circuit silicon gate cmos.
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