Datasheet4U Logo Datasheet4U.com

TH58NVG1S3AFT05

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TH58NVG1S3AFT05 Features

* x Organization Memory cell allay 2112 u 64K u 8 u 2 Register 2112 u 8 Page size 2112bytes Block size (128K  4K) bytes x Modes ReadResetAuto Page Program Auto Block EraseStatus Read x Mode control Serial inputoutput Command control x Powersupply x Program/Erase Cycles x Access time Cell array

TH58NVG1S3AFT05 General Description

The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the .

TH58NVG1S3AFT05 Datasheet (368.77 KB)

Preview of TH58NVG1S3AFT05 PDF

Datasheet Details

Part number:

TH58NVG1S3AFT05

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

368.77 KB

Description:

Toshiba mos digital integrated circuit silicon gate cmos.

📁 Related Datasheet

TH58NVG2S3BTG00 - 4-Gbit CMOS NAND EPROM (Toshiba)
TH58NVG2S3BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION Lead-Free T.

TH58NVG3D4BTG00 - 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM (Toshiba)
TOSHIBA CONFIDENTIAL TH58NVG3D4BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1024M × 8 BIT) CMOS NAND E2PROM (Mu.

TH58NVG3S0HBAI4 - 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)
TH58NVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG3S0HBAI4 is a si.

TH58NVG3S0HBAI6 - 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)
TH58NVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG3S0HBAI6 is a si.

TH58NVG3S0HTA00 - 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)
TH58NVG3S0HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG3S0HTA00 is a si.

TH58NVG3S0HTAI0 - 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)
TH58NVG3S0HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG3S0HTAI0 is a si.

TH58NVG4S0FBAID - 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM (Toshiba)
TH58NVG4S0FBAID TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG4S0FBAID is a s.

TH58NVG4S0FTA20 - 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM (Toshiba Semiconductor)
TH58NVG4S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG4S0F is a singl.

TAGS

TH58NVG1S3AFT05 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

Image Gallery

TH58NVG1S3AFT05 Datasheet Preview Page 2 TH58NVG1S3AFT05 Datasheet Preview Page 3

TH58NVG1S3AFT05 Distributor