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FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transist

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Advance Technical Information LinearL2TM Power MOSFET w/Extended FBSOA IXTK110N20L2 IXTX110N20L2 VDSS ID25 RDS(on) = 200V = 110A < 24mΩ N-Channel

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METAL OXIDE VARISTOR 10mm Disc Part Maximum Varistor Maximum Withstanding Rated Energy Typical UL CSA VDE Number Allowable Voltage Voltage (V 0

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTX110N20L2 ·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High spee

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FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET FQP10N20C / FQPF10N20C N-Channel QFET® MOSFET 200 V, 9.5 A, 360 mΩ November 2013 Features • 9.5 A,

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EC-10N16/20 & EC-10P16/20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 8.2 1.57 + 0.5 11.5 + 0.3 2

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Advance Technical Information LinearL2TM Power MOSFET w/Extended FBSOA IXTK110N20L2 IXTX110N20L2 VDSS ID25 RDS(on) = 200V = 110A < 24mΩ N-Channel

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200V N-Channel MOSFETs PDD10N20 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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200V N-Channel MOSFETs PDL10N20 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTK110N20L2 ·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High spee

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DTL10N20/DTU10N20 www.din-tek.jp N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) () Max. 0.45 at VGS = 10 V 0.47 at VGS = 4.5 V

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ECX10N20 N CHANNEL LATERAL MOSFET N Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth

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FQP10N20L December 2000 QFET FQP10N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transisto

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DTL10N20/DTU10N20 www.din-tek.jp N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) () Max. 0.45 at VGS = 10 V 0.47 at VGS = 4.5 V

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ECF10N20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 8.70 1.50 11.60 +0.3 25.00 10.90 + 0.1 3 3

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FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Features • 7.8 A, 200 V, RDS(on) = 3

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FQP10N20-VB FQP10N20-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) (:) 0.270 at VGS = 10 V ID (A)

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FQB10N20L / FQI10N20L December 2000 QFET FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode powe

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