10N40 Datasheet | Specifications & PDF Download

Sep 2008 PFP10N40 / PFF10N40 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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FTP10N40 N-Channel MOSFET Applications: • Ballast and Lighting • DC-AC Inverter Pb Lead Free Package and Finish RDS(ON) (Max.) 0.55 Ω ID 10A VDSS 40

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Philips Semiconductors Product specification PowerMOS transistor PHP10N40 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transi

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UNISONIC TECHNOLOGIES CO., LTD 10N40 Preliminary Power MOSFET 10.5A, 400V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION TO-220 The UTC 10N40 is an N-cha

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NTP10N40, NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps, 400 Volts N−Channel TO−220 and D2PAK Designed for high voltage, high sp

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MSF10N40 400V N-Channel MOSFET Description The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of f

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Philips Semiconductors Product specification PowerMOS transistor PHB10N40 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transi

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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CYStech Electronics Corp. Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN10N40

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NTP10N40, NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps, 400 Volts N−Channel TO−220 and D2PAK Designed for high voltage, high sp

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HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S March 1997 10A, 400V and 500V N-Channel IGBTs Packages HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA E

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HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDE

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Silicon N-Channel Power MOSFET ○R CS10N40 A4R General Description： CS10N40 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB10N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De

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FTP10N40/FTA10N40 400V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge (typical 34nC) Fast Switching 100% Avalanche Test

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Silicon N-Channel Power MOSFET ○R CS10N40F A9R General Description： CS10N40F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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Sep 2008 PFP10N40 / PFF10N40 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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