10N40 Datasheet | Specifications & PDF Download

PD = 5 W / 6 W Transient Voltage Suppressor SZ-10N Series Data Sheet Description The SZ-10N series are power Zener diodes designed for the protectio

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HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDE

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HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDE

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HGTP10N40F1D, HGTP10N50F1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-220AB EMITTER COLLECTOR

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NTP10N40, NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps, 400 Volts N−Channel TO−220 and D2PAK Designed for high voltage, high sp

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Silicon N-Channel Power MOSFET ○R CS10N40F A9R General Description： CS10N40F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 April 1995 10A, 12A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EM

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HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 April 1995 10A, 12A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EM

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LOW NOISE 150mA L.D.O REGULATOR R1110N SERIES APPLICATION MANUAL ELECTRONIC DEVICES DIVISION NO. EA-046-9803 NOTICE 1. The products and the product s

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R1210Nxx2x SERIES PWM Step-up DC/DC Controller NO.EA-064-111123 OUTLINE The R1210Nxx2C/xx2D Series are CMOS-based PWM step-up DC/DC Converter contr

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GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading p

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UNISONIC TECHNOLOGIES CO., LTD 10N40 Preliminary Power MOSFET 10.5A, 400V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION TO-220 The UTC 10N40 is an N-cha

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R1210Nxx1x SERIES PWM STEP-UP DC/DC CONVERTER NO.EA-075-170303 OUTLINE The R1210Nxx1x Series are CMOS-based PWM step-up DC/DC Converter, with high

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Features and Benefits ▪ DC blocking voltage, VDC, 22 to 32 V ▪ Low VF (0.95 to 1.0 V max, at IF = 6 A) ▪ Low reverse leakage current, IR = 10 μA ▪ Hig

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NTP10N40, NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps, 400 Volts N−Channel TO−220 and D2PAK Designed for high voltage, high sp

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Silicon N-Channel Power MOSFET ○R CS10N40 A8R General Description： CS10N40 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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Silicon N-Channel Power MOSFET ○R CS10N40 A4R General Description： CS10N40 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION N-channel enhancement mode fiel

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FTP10N40/FTA10N40 400V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge (typical 34nC) Fast Switching 100% Avalanche Test

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