10N60 Datasheet | Specifications & PDF Download

SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal s

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www.DataSheet4U.com FQP10N60C/FQPF10N60C FQP10N60C/FQPF10N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode p

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 9.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistanc

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FDP10N60NZ / FDPF10N60NZ — N-Channel UniFETTM II MOSFET FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ November 2013 Fea

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Free Datasheet http://www.Datasheet4U.com FHP10N60 N MOS 。 AC-DC ，DC-DC，HPMW 。 ★ 10A,600V,RDS(on)(）0.7Ω ★ 、 ★ FHP10N60 （TC=25℃） —

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BRF10N60(CS10N60F) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and s

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MDF10N60G N-channel MOSFET 600V MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced Ma

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STFH10N60M2 N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh™ M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Figure 1: In

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FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description These

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TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% av

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DG10N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG10N60N，， ，，，。 ，，。 DG10N60 is an N-channel enhancement mode MOSFET, which

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NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected G

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SGB10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand

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FDP10N60NZ / FDPF10N60NZ — N-Channel UniFETTM II MOSFET November 2013 N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features • RDS(on) = 640 mΩ (

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NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected G

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SVD10N60T/F_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor wh

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10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% av

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SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode  75% lower Eoff compared to previo

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