10N60B Datasheet | Specifications & PDF Download

10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% av

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SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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MDF10N60B N-channel MOSFET 600V MDF10N60B N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced Ma

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SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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www.DataSheet4U.com SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field e

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SSW10N60B / SSI10N60B November 2001 SSW10N60B / SSI10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff

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www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 10N60B2D1 IXSQ 10N60B2D1 VCES = 600 V I C25

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www.DataSheet4U.com SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field e

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SSW10N60B / SSI10N60B November 2001 SSW10N60B / SSI10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff

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CYStech Electronics Corp. Spec. No. : C126FP Issued Date : 2015.05.12 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN10N

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SSF10N60B November 2001 SSF10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.DataSheet4U.com IXSA 10N60B2D1 IXSP 10N60B2D1 VCES = 600 V = 20 A

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High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.DataSheet4U.com IXSA 10N60B2D1 IXSP 10N60B2D1 VCES = 600 V = 20 A

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www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 10N60B2D1 IXSQ 10N60B2D1 VCES = 600 V I C25

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STG3P2M10N60B 1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP®2 module PRELIMINARY DATA General features www.DataSheet4U.com Type VCES 6

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CYStech Electronics Corp. Spec. No. : C126E3 Issued Date : 2015.12.25 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN10N

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