10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET .
CHONGQING PINGYANG
10N60B - N-CHANNEL MOSFET
10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE 10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% av.
Fairchild
SSH10N60B - 600V N-Channel MOSFET
SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.
Fairchild Semiconductor
SSP10N60B - 600V N-Channel MOSFET
www.DataSheet4U.com SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field e.
Fairchild Semiconductor
SSS10N60B - N-Channel MOSFET
www.DataSheet4U.com SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field e.
Fairchild Semiconductor
SSI10N60B - 600V N-Channel MOSFET
SSW10N60B / SSI10N60B November 2001 SSW10N60B / SSI10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff.
Fairchild Semiconductor
10N60B - 600V N-Channel MOSFET
SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.
CYStech
MTN10N60BE3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C126E3 Issued Date : 2015.12.25 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN10N.
Fairchild Semiconductor
SSW10N60B - 600V N-Channel MOSFET
SSW10N60B / SSI10N60B November 2001 SSW10N60B / SSI10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff.
Fairchild Semiconductor
SSF10N60B - 600V N-Channel MOSFET
SSF10N60B November 2001 SSF10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.
IXYS Corporation
IXSA10N60B2D1 - High Speed IGBT
High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.DataSheet4U.com IXSA 10N60B2D1 IXSP 10N60B2D1 VCES = 600 V = 20 A.
IXYS Corporation
IXSP10N60B2D1 - High Speed IGBT
High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.DataSheet4U.com IXSA 10N60B2D1 IXSP 10N60B2D1 VCES = 600 V = 20 A.
IXYS
IXSQ10N60B2D1 - High Speed IGBT with Diode
www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 10N60B2D1 IXSQ 10N60B2D1 VCES = 600 V I C25.
IXYS
IXSH10N60B2D1 - High-Speed IGBT
www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 10N60B2D1 IXSQ 10N60B2D1 VCES = 600 V I C25.
MagnaChip
MDF10N60B - N-Channel MOSFET
MDF10N60B N-channel MOSFET 600V MDF10N60B N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced Ma.
CYStech
MTN10N60BFP - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C126FP Issued Date : 2015.05.12 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN10N.
ST Microelectronics
STG3P2M10N60B - 1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP2 module
STG3P2M10N60B 1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP®2 module PRELIMINARY DATA General features www.DataSheet4U.com Type VCES 6.