10N65B Datasheet | Specifications & PDF Download

XPTTM 650V GenX4TM IXXR110N65B4H1 w/ Sonic Diode (Electrically Isolated Tab) Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V IC1

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MDF10N65B N-channel MOSFET 650V MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω General Description The MDF10N65B MOSFET are produced using advanced Ma

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10N65(F,B,H) 10A mps,650 Volts N-CHANNEL MOSFET FEATURE  10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% av

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XPTTM 650V IGBT GenX4TM IXXH110N65B4 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V I = 110A C110 V  2.10V CE(sat) tf

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Advance Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYP10N65B3D1 Extreme Light Punch Through IGBT for 5-30kHz Switching VCES = 650V IC1

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XPTTM 650V GenX4TM IXXK110N65B4H1 w/ Sonic Diode IXXX110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V IC110 = 110A

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CYStech Electronics Corp. Spec. No. : C114E3 Issued Date : 2016.03.21 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN10N6

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XPTTM 650V GenX4TM IXXK110N65B4H1 w/ Sonic Diode IXXX110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V IC110 = 110A

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CYStech Electronics Corp. Spec. No. : C114FP Issued Date : 2015.07.12 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN10N6

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