www.DataSheet4U.com 2SK1278 N-CHANNEL SILICON POW.
A1270 - PNP Silicon Transistor
ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and .30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.TEC1-12706 - Thermoelectric Cooler
www.DataSheet4U.com Thermoelectric Cooler TEC1-12706 Performance Specifications Hot Side Temperature (ºC) Qmax (Watts) Delta Tmax (ºC) Imax (Amps) V.CZT127 - Surface Mount PNP Silicon Power Darlington Transistor
SMD Type Transistors IC Surface Mount PNP Silicon Power Darlington Transistor KZT127 (CZT127) SOT-223 Unit: mm +0.2 3.50-0.2 Features High curren.TPC8127 - MOSFET
TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8127 Lithium Ion Battery Applications Power Management Switch Applicat.TEC1-12712 - Thermoelectric Cooler
Hebei I.T. (Shanghai) Co., Lt d. Specification Item Number: TEC1-12712 Device Outline See picture below Wire Criteria 1.18AWG UL, PVC insulated.GT30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.AOZ1270AQI - 28V/15A Synchronous Regulator
ALPHA & OMEGA SEMICONDUCTOR AOZ1270AQI 28 V/15 A Synchronous EZBuckTM Regulator General Description The AOZ1270AQI is a high-efficiency, easy-to-use.FDMC0310AS-F127 - N-Channel MOSFET
SyncFETt – N-Channel, POWERTRENCH) 30 V, 21 A, 4.4 mW FDMC0310AS, FDMC0310AS-F127 General Description The FDMC0310AS has been designed to minimize los.R1275NS18M - Distributed Gate Thyristor
Date:- 1 Apr, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21) Absolute Maximum Ratin.R1275NS18L - Distributed Gate Thyristor
Date:- 1 Apr, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21) Absolute Maximum Ratin.IX2127 - High-Voltage Power MOSFET & IGBT Driver
IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter Rating VOFFSET IO +/- (Source/Sink) VCSth tON / tOFF (Typical) 60.TC1279 - Reset Monitors
TC1278/TC1279 3-Pin Reset Monitors for 5V Systems Features • • • • • • Precision VCC Monitor for 5.0V System Supplies 250msec Minimum RESET Output Dur.CDRH127LD - (CDRH Series) Surface Mount Power Inductors
SMD Power Inductor CDRH127/LD RoHS Halogen Free Description • Ferrite drum core construction. × × × ×• Magnetically shielded. • L W H: 12.3 12.3 8.0.2SC1127 - Silicon NPN Triple Diffused Transistor
Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ .A700D127M006ATE015 - (A700 Series) Polymer Aluminum Organic Capacitor
KEMET Aluminum Organic Capacitor (AO-CAP) A700 Series Polymer Aluminum Overview The KEMET Aluminum Organic Capacitor (AO-CAP) is a solid state alumin.i5127-L - High-Speed USB Flash Disk Controller
Create i5127-L i5127-L High-Speed USB Flash Disk Controller Data Sheet Version 0.90 (Preliminary) iCreate Technologies Corporation Release date: 20.NE5511279A - 7.5V OPERATION SILICON RF POWER LD-MOS FET
DISCONTINUED SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The .CC430F6127 - SoC
Product Folder Order Now Technical Documents Tools & Software Support & Community CC430F6137, CC430F6135, CC430F6127, CC430F6126, CC430F6125 CC43.MJD127 - Complementary Darlington Power Transistor
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general p.