128-MBit Datasheet | Specifications & PDF Download

M27C1001 1 Mbit (128Kb x8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Curre

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w w w . D a t a S h e e t 4 U . c o m V54C365(16/80/40)4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 System Frequency (fCK) C

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ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — T

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M28010 1 Mbit (128K x 8) Parallel EEPROM With Software Data Protection PRELIMINARY DATA s Fast Access Time: 100 ns s Single Supply Voltage: – 4.5 V t

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128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History 1.0

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Data Sheet, Rev. 1.06, Jan. 2003 HYB25D128400AT(L)-[6/7/8] HYB25D128800AT(L)-[6/7/8] HYB25D128160AT(L)-[6/7/8] 128 Mbit Double Data Rate SDRAM DDR SDR

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D a t a S h e e t , Rev. 1.0, A p r . 2 0 0 4 HYB25D128[400/800/160]C[C/E/T](L) 128 Mbit Double Data Rate SDRAM Memory Products Never stop thinking.

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M28010 1 Mbit (128K x 8) Parallel EEPROM With Software Data Protection PRELIMINARY DATA s s Fast Access Time: 100 ns Single Supply Voltage: – 4.5 V t

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M27C1001 1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM Features ■ 5v ± 10% Supply Voltage in Read Operation ■ Access Time: 35ns ■ Low Power Consump

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Data Sheet, Rev. 1.06, Jan. 2003 HYB25D128400AT(L)-[6/7/8] HYB25D128800AT(L)-[6/7/8] HYB25D128160AT(L)-[6/7/8] 128 Mbit Double Data Rate SDRAM DDR SD

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K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

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K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri

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K4S281632C CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to

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K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

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K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c

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Numonyx® P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC) Product Features Datasheet „ High performance: „ Security: — 60ns initi

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S25FL129P 128-Mbit 3.0 V Flash Memory This product is not recommended for new and current designs. For new and current designs, S25FL128S supersedes

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