128-MBit Datasheet | Specifications & PDF Download

Sept. 2024 SCB18X128XX0AF 128Mbit DDR OPI Xccela PSRAM EU RoHS Compliant Products Data Sheet Rev. H Data Sheet SCB18X128XX0AF 128Mbit DDR OPI Xccela

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1-Mbit (128 K × 8) Static RAM Features ■ Temperature Ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ Pin and Function compatibl

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K4S280832A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

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1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w L

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CY62128EV30 MoBL® 1-Mbit (128K × 8) Static RAM 1-Mbit (128K × 8) Static RAM Features ■ Very high speed: 45 ns ■ Temperature ranges: ❐ Industrial: –40

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HYB 39S128400/800/160CT(L) 128-MBit Synchronous DRAM www.DataSheet4U.com 128-MBit Synchronous DRAM • High Performance: -7 -7.5 133 7.5 5.4 10 6 -8 1

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S25FL127S 128 Mbit (16 Mbyte) MirrorBit® Flash Non-Volatile Memory CMOS 3.0 Volt Core Serial Peripheral Interface with Multi-I/O Data Sheet (Prelimina

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CY7C109D CY7C1009D 1-Mbit (128 K × 8) Static RAM 1-Mbit (128 K × 8) Static RAM Features ■ Pin- and function-compatible with CY7C109B/CY7C1009B ■ High

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M27C1001 1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM Features ■ 5v ± 10% Supply Voltage in Read Operation ■ Access Time: 35ns ■ Low Power Consump

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M27C1001 1 Mbit (128Kb x8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Curre

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M29F010B 1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPER

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www.datasheet4u.com April 2007 HYB25DC512800B[E/F] HYB25DC512160B[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM RoHS Compliant Products Internet

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October 2007 www.DataSheet4U.com HYB39S128400F[E/T](L) HY[B/I]39S128800F[E/T](L) HY[B/I]39S128160F[E/T](L) HYB39S 128407 F E 128-MBit Synchronous DRA

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www.DataSheet4U.com D a t a S h e e t , Rev. 1.10, O c t . 2 0 0 5 HYB25DC512800C[E/F] HYB25DC512160C[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM

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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) 32, 64, and 128 Mbit Datasheet Product Features „ Architecture — Symmetrical 128-

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NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES

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CYK128K16MCCB 2-Mbit (128K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 55 ns, 70 ns • Ultra-low active power —

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M27C202 2 Mbit (128Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Curre

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1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w L

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IS42S81600A, IS42S16800A, IS42S32400A, 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166,143,100 MHz • Fully s

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