128-Megabit Datasheet | Specifications & PDF Download

XM25QH128A XM25QH128A preliminary 128 Megabit 3V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES  Single power supply operation - Full vo

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EN35SXR128A (2PC) EN35SXR128A (2PC) 128 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation – Full v

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Am29F010B Data Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to thi

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AT27C010/L Features • • • • • • • • • Fast Read Access Time - 45 ns Low Power CMOS Operation 100 µA max. Standby 25 mA max. Active at 5 MHz (AT27C01

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DATA SHEET Am29F200B 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V for r

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Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture –

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EN25Q128 EN25Q128 128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 v

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AT29C010A Features • • • • • • • • • • • • • Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram

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www.DataSheet4U.com PDM41024 1 Megabit Static RAM 128K x 8-Bit Features n 1 2 3 4 5 6 7 Description The PDM41024 is a high-performance CMOS static

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EN25QX128A (2V) EN25QX128A (2V) 128 Megabit 3V Serial Flash Memory with 4Kbyte Uniform Spercetloimr inary FEATURES  Single power supply opera

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Features • Fast read access time – 45ns • Low-power CMOS operation – 100µA max standby – 25mA max active at 5MHz • JEDEC standard packages – 32-lead P

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Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Bytes – Internal Control Timer

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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FINAL Am29F010 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation

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28C010T 1 Megabit (128K x 8-Bit) EEPROM VCC VSS RES OE CE WE RES A0 Y Decoder Address Buffer and Latch A7 A16 Data Latch Y Gating I/O Buffer and Input

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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FINAL Am27C010 1 Megabit (128 K x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS s Fast access time — Speed options as fast as 45 ns s Low power consu

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Am29LV001B Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. Please contact your Spansion representative f

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1-Megabit (128K x 8) Paged Parallel EEPROM Features • Fast Read Access Time: 120 ns • Automatic Page Write Operation: – Internal address and data latc

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