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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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1CY7C1380BV25 PRELIMINARY CY7C1380BV25 CY7C1382BV25 512K x 36 / 1 Mb x 18 Pipelined SRAM Features • • • • • • • • • • • Fast clock speed: 200,166,

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MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR12KM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12KM-14 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3

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ESMT SDRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program

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FP75R12KT4 EconoPIM™3 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoPIM™3 module with fast Trench/Fieldstop I

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Features • Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fas

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www.DataSheet4U.com Features • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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Datasheet 500mA Variable/Fixed Output LDO Regulators BDxxKA5 Series BDxxKA5W Series BD00KA5W Series ●General Description The BDxxKA5 series are low-s

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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IS42SM32100C IS42RM32100C IS42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,43

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http://www.ncepower.com Pb Free Product NCE60P12K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12K uses advanced trench technol

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-4E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29LV800TA-70/90/-12/MBM29LV800BA-70/-90/-12 s FEATURE

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IS61LV51216 IS64LV51216 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY www.datasheet4u.com ISSI DECEMBER 2005 ® FEATURES • High

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IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM www.DataShe

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Features • Single-voltage Operation • • • – 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture

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http://www.ncepower.com Pb Free Product NCE40H12K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12K uses advanced trench technol

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Military-Fasteners.com NAS1716C12K LOOP CLAMP SPEC Description: Length: 1-61/64 , saddle style, NAS1716 series clamp NAS1716C12K Manufacturer certs

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SPECIFICATIONS PRODUCT： TYPE： MODEL： CITATION： REVISION： TOTAL PAGES： RELEASED DATE： VARISTOR NFV10D□□□K B01 5 Oct. 15, 2001 PAGE：1/5 REVISION HIST

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Features • • • • • • • • • • • • Fast Read Access Time - 100 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and

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