Sanyo
LC331632M-10 - 512K (32768 words X 16 bits) Pseudo-SRAM
(12 views)
Samsung semiconductor
KM23V8105D - 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
KM23V8105D(G)
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access
(10 views)
ETC
GS88036AT-250 - 512K x 18/ 256K x 32/ 256K x 36 9Mb Sync Burst SRAMs
GS88018/32/36AT-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp Features
• FT pin for user-configurable flow through or pipeline
(8 views)
White Electronic Designs
WPS512K8x - 512K x 8 SRAM
(8 views)
BrightKing
112KD14 - Metal Oxide Varistor
Metal Oxide Varistor (MOV) Data Sheet
Features
■ Wide operating voltage (V1mA) range from 18V to 1800V ■ Fast responding to transient over-voltage ■ L
(8 views)
Samsung Semiconductor
KM23C8100DT - 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
www.DataSheet4U.com
KM23C8100D(E)T
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(wor
(8 views)
Lyontek
LY615128 - 5V 512K X 8 BIT HIGH SPEED CMOS SRAM
®
LY615128
Rev. 1.2
5V 512K X 8 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised Pac
(8 views)
Cypress Semiconductor
CY7C1612KV18 - 144-Mbit QDR II SRAM Two-Word Burst Architecture
CY7C1625KV18 CY7C1612KV18 CY7C1614KV18
144-Mbit QDR® II SRAM Two-Word Burst Architecture
144-Mbit QDR® II SRAM Two-Word Burst Architecture
Features
■
(7 views)
Hynix Semiconductor
HY29F400BT45 - 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(7 views)
Hynix Semiconductor
HY29F400TT90 - 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(7 views)
Sanyo
LC33864PM-80 - 512K (65536 words X 8 bits) Pseudo-SRAM
(7 views)
STMicroelectronics
29F040 - 4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory
M29F040
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory
NOT FOR NEW DESIGN
M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo
(7 views)
Lyontek
LY62L5128 - 512K X 8 BIT LOW POWER CMOS SRAM
®
LY62L5128
Rev. 1.7
512K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Adding PKG typ
(7 views)
ESMT
M12L64322A-5TG2S - 512K x 32 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program
(7 views)
Integrated Device
IDT7MPV6255 - 256KB AND 512KB SECONDARY CACHE MODULES FOR THE PowerPCO
256KB AND 512KB SECONDARY CACHE MODULES FOR THE PowerPC™
Integrated Device Technology, Inc.
IDT7MPV6253 IDT7MPV6255/56
FEATURES
• For CHRP based Pow
(6 views)
Samsung Semiconductor
KM416S1021C - 512K x 16-Bit x 2-Bank SDRAM
KM416S1021C
512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
FEATURES
• JEDEC standard 3.3V power supply • SSTL_3 (Class II) compatible wit
(6 views)
HUAAN
VDR-14D112K - Metal Oxide Varistor
VDR-14D Straight Leads Series
Metal Oxide Varistors (MOV)
Features
·Wide operating voltage (V1mA) range from 18V to 1800V
·Fast responding to tran
(6 views)
HUAAN
VDR-14D112KHJ - Metal Oxide Varistor
14D High Temperture 125℃ Series
Metal Oxide Varistors (MOV)
Features
·Wide operating voltage (V1mA) range from 18V to 1800V
·Fast responding to tr
(6 views)
HUAAN
VDR-14D112K - Add Blue Casing Metal Oxide Varistor
14D Explosion Proof Type Series
Add Blue Casing Metal Oxide Varistors (MOV)
Features
·Wide operating voltage (V1mA) range from 18V to 1800V
·Fast
(6 views)
Eon Silicon Solution
EN29LV800C - 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
EN29LV800C
Purpose
Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on ICs with < cFeon > from Janua
(5 views)