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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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M27C800 8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF

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GT24C512B Advanced GT24C512B 2-WIRE 512K Bits Serial EEPROM Copyright © 2014 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec

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Technische Information / Technical Information IGBT-Module IGBT-modules FP100R12KT4_B11 EconoPIM™3 Modul mit schnellem Trench/Feldstopp IGBT4 und E

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CY7C1370KV25 CY7C1372KV25 18-Mbit (512K × 36/1M × 18) Pipelined SRAM with NoBL™ Architecture 18-Mbit (512K × 36/1M × 18) Pipelined SRAM with NoBL™ Ar

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PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5

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24AA515/24LC515/24FC515 512K I2C™ CMOS Serial EEPROM Device Selection Table Part Number 24AA515 24LC515 24FC515 †100 Package Type Temp Ranges I I I P

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M27W400 4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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28F512 512K (64K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical B

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FF200R12KS4P 62mm C-Serien Modul mit schnellem IGBT2 für hochfrequentes Schalten und bereits aufgetragenem Thermal Interface Material 62mm C-Series mo

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Technische Information / Technical Information IGBT-Module IGBT-modules F4-75R12KS4 IGBT,Wechselrichter / IGBT,Inverter Höchstzulässige Werte / Ma

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Technische Information / Technical Information IGBT-Module IGBT-modules FP50R12KE3 IGBT,Wechselrichter / IGBT,Inverter Höchstzulässige Werte / Max

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LinkSmart Rev. No. Approved date A July 17 2002 L29S800F 8MEGABIT (1M×8 /512K×16) 3 VOLT CMOS FLASH MEMERY PRELIMINARY A Revision history History I

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FP75R12KT4 EconoPIM™3 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoPIM™3 module with fast Trench/Fieldstop I

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M27C4001 4 Mbit (512Kb x 8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active

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M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo

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