12m Datasheet | Specifications & PDF Download

NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru

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NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru

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www.DataSheet4U.com NT5DS128M4BF / NT5DS128M4BT/ NT5DS128M4BG (Green) / NT5DS128M4BS (Green) NT5DS64M8BF / NT5DS64M8BT/ NT5DS64M8BG (Green) / NT5DS64

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NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru

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www.DataSheet4U.com NT5DS128M4BF / NT5DS128M4BT/ NT5DS128M4BG (Green) / NT5DS128M4BS (Green) NT5DS64M8BF / NT5DS64M8BT/ NT5DS64M8BG (Green) / NT5DS64

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www.DataSheet4U.com NT5DS128M4BF / NT5DS128M4BT/ NT5DS128M4BG (Green) / NT5DS128M4BS (Green) NT5DS64M8BF / NT5DS64M8BT/ NT5DS64M8BG (Green) / NT5DS64

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W25Q512JV 3V 512M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI Publication Release Date: June 25, 2019 -Revision B W25Q512JV Table of Contents 1. GENER

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9012M Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features PC 、IC ,hFE , 901

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PRELIMINARY DATA SHEET 512MB Unbuffered DDR SDRAM DIMM EBD52UC8AKFA-5-E (64M words × 64 bits, 2 Ranks) Description The EBD52UC8AKFA is 64M words × 64

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178ball FBGA Specification 8Gb LPDDR3 (x32) 16Gb LPDDR3 (x32) V1.0 1 Document Title FBGA 8Gb (x32, 1CS) LPDDR3 16Gb (x32, 2CS) LPDDR3 Revision Hist

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NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru

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AC-DC Controller CXA3812M Description The CXA3812M is the current resonant controller IC and has optimum configuration to realize various power suppl

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8Gb: x4, x8, x16 DDR4 SDRAM Features DDR4 SDRAM MT40A2G4 MT40A1G8 MT40A512M16 Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-d

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TYN612M 12 A SCR Main features A Symbol IT(RMS) VDRM/VRRM IGT (min / max) Value 12 600 1.5 / 5 Unit A V mA Description The TYN612M SCR is suitab

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JIEJIE MICROELECTRONICS CO. , Ltd JEB712M TVS Array Rev.2.2 FEATURES  400 watts peak pulse power per line (tP=8/20µs)  Protects two -7V~12V line

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Micron Confidential and Proprietary LPDDR5 SDRAM Features LPDDR5 SDRAM MT62F512M32D2, MT62F1G32D4, MT62F2G32D8, MT62F512M64D4, MT62F1G64D8 Feature

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HY5RS123235BFP 512Mbit (16Mx32) GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hy

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S28HS512T, S28HS01GT, S28HL512T, S28HL01GT 512Mb/1Gb SEMPER™ Flash S Octal interface, 1.8V/3.0V Features • Infineon 45-nm MIRRORBIT™ technology that s

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A3R12E30CBF A3R12E40CBF 512Mb DDRII Synchronous DRAM 512Mb DDRII SDRAM Specification A3R12E30CBF A3R12E40CBF Zentel Electronics Corp. Revision 1.2

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W25Q512JV 3V 512M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI Publication Release Date: June 25, 2019 -Revision B W25Q512JV Table of Contents 1. GENER

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