12m Datasheet | Specifications & PDF Download

DC/DC B_M-2WR3 K-CUT 2W,， DC-DC ● 1500VDC/1min, 3000VDC/1s ● ：0.025W(Typ.) ● ：-40°C~+85°C ● 91% ● ：， ● ● SIP RoHS ● /(20MH)：30mVp-p(

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9012M Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features PC 、IC ,hFE , 901

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14118 Stowe Drive, Suite B Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com Voltage-Controll

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Uniform Sector Dual and Quad Serial Flash GD25LB512MF GD25LB512MF DATASHEET GD25LB512MF-Rev1.0 1 November 2023 Uniform Sector Dual and Quad Seri

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AS4C512M8D4A Revision History 4Gb DDR4 AS4C512M8D4A - 78 ball FBGA PACKAGE Revision Rev 1.0 Details Initial Release Date Aug 2022 Confidential -

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W25Q512JV 3V 512M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI Publication Release Date: June 25, 2019 -Revision B W25Q512JV Table of Contents 1. GENER

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8Gb: x4, x8, x16 DDR4 SDRAM Features DDR4 SDRAM MT40A2G4 MT40A1G8 MT40A512M16 Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-d

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TYN612M 12 A SCR Main features A Symbol IT(RMS) VDRM/VRRM IGT (min / max) Value 12 600 1.5 / 5 Unit A V mA Description The TYN612M SCR is suitab

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A3R12E30CBF A3R12E40CBF 512Mb DDRII Synchronous DRAM 512Mb DDRII SDRAM Specification A3R12E30CBF A3R12E40CBF Zentel Electronics Corp. Revision 1.2

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W25Q512JV 3V 512M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI Publication Release Date: June 25, 2019 -Revision B W25Q512JV Table of Contents 1. GENER

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AC-DC Controller CXA3812M Description The CXA3812M is the current resonant controller IC and has optimum configuration to realize various power suppl

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Micron Confidential and Proprietary LPDDR5 SDRAM Features LPDDR5 SDRAM MT62F512M32D2, MT62F1G32D4, MT62F2G32D8, MT62F512M64D4, MT62F1G64D8 Feature

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N-Channel Enhancement Mode Power MOSFET Description The PED3312M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It

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PED30D12M N-Channel Enhancement Mode Power MOSFET Description The PED30D12M uses advanced trench technology to provide excellent RDS(ON) and low gate

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IS25LP512M IS25WP512M 512Mb SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE 512Mb SERIAL FLASH MEMORY 133/112MHZ MULTI I/O

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BL3701/BL3702/BL3704 12MHZ Low Noise Opamps Features • Single-Supply Operation from +2.1V ~ +5.5V • Low Noise : 6.5nV/√Hz @1kHz • Gain-Bandwidth Produ

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Memory Module Specifications KVR13N9S8/4 4GB 1Rx8 512M x 64-Bit PC3-10600 CL9 240-Pin DIMM DESCRIPTION This document describes ValueRAM's 512M x 64-bi

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W25Q512JV 3V 512M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI Publication Release Date: June 25, 2019 -Revision B W25Q512JV Table of Contents 1. GENER

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