14kV Datasheet | Specifications & PDF Download

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo

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LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo

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CY7C1525KV18 CY7C1512KV18 CY7C1514KV18 72-Mbit QDR® II SRAM Two-Word Burst Architecture 72-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■ S

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CY7C1425KV18 CY7C1412KV18 CY7C1414KV18 36-Mbit QDR® II SRAM Two-Word Burst Architecture 36-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■ S

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CY7C1625KV18 CY7C1612KV18 CY7C1614KV18 144-Mbit QDR® II SRAM Two-Word Burst Architecture 144-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■

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Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G

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CY7C1312KV18/CY7C1314KV18 18-Mbit QDR® II SRAM Two-Word Burst Architecture 18-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■ Separate indep

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HVGT SHV-14 14kV 5mA HIGH VOLTAGE DIODES The SHV series of diodes have been miniaturized by resin on the assumption fo remolding. Measures against c

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