150N06 Datasheet | Specifications & PDF Download

RSD150N06FRA 　　 Nch 60V 15A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 60V 40mΩ ±15A 20W lFeatures 1) Low on - resistance 2) Fast switchin

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RSD150N06FRA 　　 Nch 60V 15A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 60V 40mΩ ±15A 20W lFeatures 1) Low on - resistance 2) Fast switchin

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YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● 100% UIS Tested ●

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UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 150 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC UTT150N06 is an N-

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N-Channel Enhancement Mode Power Mosfet Description The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low ga

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October 2009 MMF150N060B6B 600V 150A FRED Module PRELIMINARY RoHS Compliant PRODUCT FEATURES y Ultrafast Reverse Recovery Time y Soft Reverse Rec

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UNISONIC TECHNOLOGIES CO., LTD UT150N06M Preliminary 150A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET  DESCRIPTION The UTC UT150N06M is a

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Advanced Technical Information PolarHTTM Power MOSFET www.datasheet4u.com N-Channel IXTQ 150N06P VDSS ID25 RDS(on) = 60 V = 150 A = 10 mΩ Enhanc

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID=150A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :

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AP150N06D 65V N-Channel Enhancement Mode MOSFET Description The AP150N06D uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate c

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Data Sheet 4V Drive Nch MOSFET RSD150N06 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circui

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SLM150N06G SLM150N06G 60V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technol

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SLP150N06G SLP150N06G 60V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technolo

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SLB150N06T SLB150N06T 60V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanc

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SII150N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394 ) www.DataSheet4U.com TC = 25oC, unless otherwise specified Conditions Values 600 180(150)

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SLP150N06T SLP150N06T 60V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanc

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