Datasheet4U Logo Datasheet4U.com

IXTQ150N06P

N-ChannelMOSFET

IXTQ150N06P Features

* Drain Current ID=150A@ TC=25℃

* Drain Source Voltage- : VDSS= 60V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max)

* Fast Switching

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Switch-Mode and Resonant-Mod

IXTQ150N06P Datasheet (252.59 KB)

Preview of IXTQ150N06P PDF

Datasheet Details

Part number:

IXTQ150N06P

Manufacturer:

INCHANGE

File Size:

252.59 KB

Description:

N-channelmosfet.

📁 Related Datasheet

IXTQ150N06P - N-channel MOSFETs (IXYS Corporation)
Advanced Technical Information PolarHTTM Power MOSFET .. N-Channel IXTQ 150N06P VDSS ID25 RDS(on) = 60 V = 150 A = 10 mΩ Enhanc.

IXTQ150N15P - Power MOSFET (IXYS Corporation)
PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150 V 150 A 13 m Ω TO-264 (IX.

IXTQ150N15P - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) ·Fast Swi.

IXTQ152N085T - N-Channel MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH152N085T IXTQ152N085T VDSS ID25 RDS(on) .

IXTQ152N085T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max) ·Fast Switc.

IXTQ100N25P - N-Channel MOSFET (IXYS Corporation)
PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ.

IXTQ102N15T - Power MOSFET (IXYS)
Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T.

IXTQ102N15T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Swi.

TAGS

IXTQ150N06P N-ChannelMOSFET INCHANGE

Image Gallery

IXTQ150N06P Datasheet Preview Page 2

IXTQ150N06P Distributor