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IXTQ110N055P Datasheet - IXYS Corporation

IXTQ110N055P - PolarHT Power MOSFET

www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 RDS(on) = 55 V = 110 A = 13.5 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG

IXTQ110N055P Features

* z Md Weight 1.13/10 Nm/lb.in. 5.5 4 3 g g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA V

IXTQ110N055P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTQ110N055P

Manufacturer:

IXYS Corporation

File Size:

151.53 KB

Description:

Polarht power mosfet.

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IXTQ110N055P PolarHT Power MOSFET IXYS Corporation