* z Md Weight 1.13/10 Nm/lb.in. 5.5 4 3 g g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA V
IXTQ110N055P Datasheet (151.53 KB)
IXTQ110N055P
IXYS Corporation
151.53 KB
Polarht power mosfet.
www.DataSheet4U.com
PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 110N055P IXTA 110N055P IXTP 110N055P
VDSS ID25
RDS(on)
= 55 V = 110 A =.
📁 Related Datasheet
IXTQ110N055P - N-ChannelMOSFET
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isc N-Channel MOSFET Transistor
IXTQ110N055P
·FEATURES ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source O.
IXTQ110N10P - N-Channel MOSFET
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Advance Technical Information
TM .. PolarHT Power MOSFET
IXTQ 110N10P IXTT 110N10P
VDSS ID25
RDS(on)
= 100 = 110 = 15
V A mΩ
N-.
IXTQ110N10P - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 15mΩ(Max) ·Fast Swi.
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PolarHTTM Power MOSFET
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N-Channel Enhancement Mode Avalanche Rated
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IXTQ102N15T - Power MOSFET
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Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
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TO-263 (IXTA)
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IXTQ102N15T - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
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IXTQ102N20T - Power MOSFET
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TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH102N20T IXTQ102N20T IXTV102N20T
VDSS = ID2.
IXTQ102N20T - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 23mΩ(Max) ·Fast Swi.
