Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ130N15T V= DSS ID25 = RDS(on) ≤ 150 130 12 V A mΩ TO-247 (IXTH) Symbol VDSS V DGR V GSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°
Datasheet Details
Part number:
IXTQ130N15T, IXTH130N15T
Manufacturer:
IXYS
File Size:
189.54 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTQ130N15T, IXTH130N15T.
Please refer to the document for exact specifications by model.