IXTQ130N15T, IXTH130N15T Datasheet - IXYS

IXTQ130N15T Power MOSFET

Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ130N15T V= DSS ID25 = RDS(on) ≤ 150 130 12 V A mΩ TO-247 (IXTH) Symbol VDSS V DGR V GSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°.

IXTQ130N15T Features

* z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA Characteristic Values Min. Typ. Max. 150 V VGS(th) VDS = VGS, ID = 1

IXTH130N15T-IXYS.pdf