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IXTQ130N15T

Power MOSFET

IXTQ130N15T Features

* z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA Characteristic Values Min. Typ. Max. 150 V VGS(th) VDS = VGS, ID = 1

IXTQ130N15T Datasheet (189.54 KB)

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Datasheet Details

Part number:

IXTQ130N15T

Manufacturer:

IXYS

File Size:

189.54 KB

Description:

Power mosfet.
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ130N15T V= DSS ID25 = RDS(on) .

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IXTQ130N15T Power MOSFET IXYS

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