* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99118E(12/05) Symbol gfs C iss C oss C rss td(on) tr td(off) tf
IXTQ100N25P Datasheet (265.34 KB)
IXTQ100N25P
IXYS Corporation
265.34 KB
N-channel mosfet.
PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ.
📁 Related Datasheet
IXTQ102N15T Power MOSFET (IXYS)
IXTQ102N15T N-Channel MOSFET (INCHANGE)
IXTQ102N20T Power MOSFET (IXYS)
IXTQ102N20T N-Channel MOSFET (INCHANGE)
IXTQ10P50P Power MOSFET (IXYS)
IXTQ110N055P PolarHT Power MOSFET (IXYS Corporation)
IXTQ110N055P N-ChannelMOSFET (INCHANGE)
IXTQ110N10P N-Channel MOSFET (IXYS Corporation)
IXTQ110N10P N-Channel MOSFET (INCHANGE)
IXTQ120N15P Power MOSFET (IXYS)
