IXTQ130N10T - Power MOSFET
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N10T IXTQ130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247)(TO-3P) TO-24.
IXTQ130N10T Features
* z Ultra-low On Resistance z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect z 175 °C Operating Temperature
Advantages
z Easy to mount z Space savings z High power density
Applications
z Automotive - Motor Drives - High Side Switch - 12V Battery - ABS