IXTQ130N10T, IXTH130N10T Datasheet - IXYS Corporation

IXTQ130N10T - Power MOSFET

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N10T IXTQ130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247)(TO-3P) TO-24.

IXTQ130N10T Features

* z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density Applications z Automotive - Motor Drives - High Side Switch - 12V Battery - ABS

IXTH130N10T-IXYSCorporation.pdf