* z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density Applications z Automotive - Motor Drives - High Side Switch - 12V Battery - ABS
IXTQ130N10T Datasheet (134.65 KB)
IXTQ130N10T
IXYS Corporation
134.65 KB
Power mosfet.
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH130N10T IXTQ130N10T
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1mΩ
TO-247 (IXTH)
.
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