IXTQ130N10T Datasheet, Mosfet, IXYS Corporation

IXTQ130N10T Features

• Mosfet z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z

PDF File Details

Part number:

IXTQ130N10T

Manufacturer:

IXYS Corporation

File Size:

134.65kb

Download:

📄 Datasheet

Description:

Power mosfet.

IXTQ130N10T Application

• Applications z Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems z DC/DC Converters and Off-line UPS z Primary- Side Switch z

TAGS

IXTQ130N10T

IXYS Corporation

📁 Related Datasheet

IXTQ130N10T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.1mΩ(Max) ·Fast Sw.

IXTQ130N15T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ130N15T V= DSS ID25 = RDS(on) .

IXTQ130N15T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) ·Fast Swi.

IXTQ130N20T - Power MOSFET (IXYS)
TrenchTM Power MOSFET IXTQ130N20T IXTH130N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 I.

IXTQ130N20T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·Fast Swi.

IXTQ100N25P - N-Channel MOSFET (IXYS Corporation)
PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ.

IXTQ102N15T - Power MOSFET (IXYS)
Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T.

IXTQ102N15T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Swi.

IXTQ102N20T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2.

IXTQ102N20T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Fast Swi.