IXTQ14N60P
IXYS
201.29kb
Polarhv power mosfet.
TAGS
📁 Related Datasheet
IXTQ14N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 550mΩ(Max) ·Fast Sw.
IXTQ140N10P - Power MOSFET
(IXYS Corporation)
PolarHTTM Power MOSFET
..
IXTQ 140N10P IXTT 140N10P
VDSS ID25
RDS(on)
= = ≤
100 V 140 A 11 mΩ
N-Channel Enhancement Mode Avalan.
IXTQ140N10P - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 11mΩ(Max) ·Fast Swi.
IXTQ100N25P - N-Channel MOSFET
(IXYS Corporation)
PolarHTTM Power MOSFET
IXTK 100N25P IXTQ 100N25P IXTT 100N25P
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 = ≤ RDS(on)
250 V 100 A 27 mΩ.
IXTQ102N15T - Power MOSFET
(IXYS)
Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
T.
IXTQ102N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 18mΩ(Max) ·Fast Swi.
IXTQ102N20T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH102N20T IXTQ102N20T IXTV102N20T
VDSS = ID2.
IXTQ102N20T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 23mΩ(Max) ·Fast Swi.
IXTQ10P50P - Power MOSFET
(IXYS)
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTA10P50P IXTP10P50P IXTQ10P50P IXTH10P50P
TO-263 AA (IXTA)
TO-220AB (IXTP)
VDSS.
IXTQ110N055P - PolarHT Power MOSFET
(IXYS Corporation)
..
PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 110N055P IXTA 110N055P IXTP 110N055P
VDSS ID25
RDS(on)
= 55 V = 110 A =.