IXTQ150N06P Datasheet - IXYS Corporation

IXTQ150N06P N-channel MOSFETs

Advanced Technical Information PolarHTTM Power MOSFET www.datasheet4u.com N-Channel IXTQ 150N06P VDSS ID25 RDS(on) = 60 V = 150 A = 10 mΩ Enhancement Mode TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, R.

IXTQ150N06P Features

* z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering package for 10s Mounting

IXTQ150N06P_IXYSCorporation.pdf