IXTQ150N06P
IXYS Corporation
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N-channel mosfets.
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IXTQ150N06P - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID=150A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
:.
IXTQ150N15P - Power MOSFET
(IXYS Corporation)
PolarHTTM Power MOSFET
IXTK 150N15P IXTQ 150N15P
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 = RDS(on) ≤
150 V 150 A
13 m Ω
TO-264 (IX.
IXTQ150N15P - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 13mΩ(Max) ·Fast Swi.
IXTQ152N085T - N-Channel MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH152N085T IXTQ152N085T
VDSS ID25
RDS(on)
.
IXTQ152N085T - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 75V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 7mΩ(Max) ·Fast Switc.
IXTQ100N25P - N-Channel MOSFET
(IXYS Corporation)
PolarHTTM Power MOSFET
IXTK 100N25P IXTQ 100N25P IXTT 100N25P
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 = ≤ RDS(on)
250 V 100 A 27 mΩ.
IXTQ102N15T - Power MOSFET
(IXYS)
Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
T.
IXTQ102N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 18mΩ(Max) ·Fast Swi.
IXTQ102N20T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH102N20T IXTQ102N20T IXTV102N20T
VDSS = ID2.
IXTQ102N20T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 23mΩ(Max) ·Fast Swi.