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IXTQ110N10P N-Channel MOSFET

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Description

Advance Technical Information TM www.DataSheet4U.com PolarHT Power MOSFET IXTQ 110N10P IXTT 110N10P VDSS ID25 RDS(on) = 100 = 110 = 15 V A mΩ N-.

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Datasheet Specifications

Part number
IXTQ110N10P
Manufacturer
IXYS Corporation
File Size
612.25 KB
Datasheet
IXTQ110N10P_IXYSCorporation.pdf
Description
N-Channel MOSFET

Features

* z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 1.13/10 Nm/lb. in. 5.5 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unles

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