IXTQ102N20T, IXTH102N20T - Power MOSFET

IXYS

IXTQ102N20T Description

Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2.

IXTQ102N20T Features

* z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density © 2007 IXYS CORPORATION, All rights reserved DS99821 (04/07) IXTH102N20T IXTQ102N20T IXTV102N20T Symb

📥 Download Datasheet

IXTQ102N20T Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTQ102N20T, IXTH102N20T. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: IXTQ102N20T, IXTH102N20T
Manufacturer: IXYS
File Size: 172.64 KB
Datasheet: IXTH102N20T-IXYS.pdf
Description: Power MOSFET
Note: This datasheet PDF includes multiple part numbers: IXTQ102N20T, IXTH102N20T.
Please refer to the document for exact specifications by model.

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Power MOSFET IXYS

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