IXTQ102N20T, IXTH102N20T Datasheet - IXYS

IXTQ102N20T - Power MOSFET

Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID25 = RDS(on) ≤ 200 102 23 V A mΩ Symbol VDSS VGSM I D25 ILRMS IDM I AS EAS dv/dt PD TJ TJM Tstg T L TSOLD Md F C Weight Test Conditions TJ = 25°C to 175°C Transient T = 25°C C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM T = 25°C C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.5 Ω TC = 25°C 1.6 mm (0.062 in.

IXTQ102N20T Features

* z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density © 2007 IXYS CORPORATION, All rights reserved DS99821 (04/07) IXTH102N20T IXTQ102N20T IXTV102N20T Symb

IXTH102N20T-IXYS.pdf