IXTQ102N20T - Power MOSFET
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID25 = RDS(on) ≤ 200 102 23 V A mΩ Symbol VDSS VGSM I D25 ILRMS IDM I AS EAS dv/dt PD TJ TJM Tstg T L TSOLD Md F C Weight Test Conditions TJ = 25°C to 175°C Transient T = 25°C C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM T = 25°C C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.5 Ω TC = 25°C 1.6 mm (0.062 in.
IXTQ102N20T Features
* z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect z 175 °C Operating Temperature
Advantages z Easy to mount z Space savings z High power density
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DS99821 (04/07)
IXTH102N20T IXTQ102N20T IXTV102N20T
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