IXTQ10P50P - Power MOSFET
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTP10P50P IXTQ10P50P IXTH10P50P TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 = RDS(on) - 500V - 10A 1 TO-3P (IXTQ) G S D (Tab) G DS D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings - 500 V - 500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJ.
IXTQ10P50P Features
* International Standard Packages
* Avalanche Rated
* Rugged PolarPTM Process
* Low Package Inductance
* Fast Intrinsic Diode
Advantages
* Easy to Mount
* Space Savings
* High Power Density
Applications
* High-Side Switches
* Push Pull Amplifiers
* DC Chop