* l l 1.13/10 Nm/lb.in. 5.5 5.0 g g l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID
IXTQ140N10P Datasheet (202.82 KB)
IXTQ140N10P
IXYS Corporation
202.82 KB
Power mosfet.
PolarHTTM Power MOSFET www.datasheet4u.com IXTQ 140N10P IXTT 140N10P VDSS ID25 RDS(on) = = ≤ 100 V 140 A 11 mΩ N-Channel Enhancement Mode Avalan.
📁 Related Datasheet
IXTQ140N10P N-ChannelMOSFET (INCHANGE)
IXTQ14N60P PolarHV Power MOSFET (IXYS)
IXTQ14N60P N-Channel MOSFET (INCHANGE)
IXTQ100N25P N-Channel MOSFET (IXYS Corporation)
IXTQ102N15T Power MOSFET (IXYS)
IXTQ102N15T N-Channel MOSFET (INCHANGE)
IXTQ102N20T Power MOSFET (IXYS)
IXTQ102N20T N-Channel MOSFET (INCHANGE)
IXTQ10P50P Power MOSFET (IXYS)
IXTQ110N055P PolarHT Power MOSFET (IXYS Corporation)
