IXTQ140N10P - Power MOSFET

IXYS Corporation

Datasheet Details

l l 1.13/10 Nm/lb. in. 5.5 5.0 g g l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175° C Characteristic Values Min. Typ. Max. 100 3.0 5.0 ±100 25 500 11 9 V V nA µA µA mΩ mΩ Advantages l l l Easy to mount Space savings Hi.

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Published: Jun 8, 2009 |