IXTQ120N20P Datasheet - IXYS

IXTQ120N20P PolarHT Power MOSFET

PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 200 V 120 A 22 m Ω TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 V 200 V VGS VGSM Continuous Transient ±20 V ±30 V ID25 ID(RMS) IDM I AR EAR E AS TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C T C = 25° C 120 A 75 A 300 A.

IXTQ120N20P Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99207E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(

IXTQ120N20P Datasheet (232.84 KB)