IXTQ150N15P Datasheet, Mosfet, IXYS Corporation

IXTQ150N15P Features

  • Mosfet l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High p

PDF File Details

Part number:

IXTQ150N15P

Manufacturer:

IXYS Corporation

File Size:

293.87kb

Download:

📄 Datasheet

Description:

Power mosfet.

Datasheet Preview: IXTQ150N15P 📥 Download PDF (293.87kb)
Page 2 of IXTQ150N15P Page 3 of IXTQ150N15P

TAGS

IXTQ150N15P
Power
MOSFET
IXYS Corporation

📁 Related Datasheet

IXTQ150N15P - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) ·Fast Swi.

IXTQ150N06P - N-channel MOSFETs (IXYS Corporation)
Advanced Technical Information PolarHTTM Power MOSFET .. N-Channel IXTQ 150N06P VDSS ID25 RDS(on) = 60 V = 150 A = 10 mΩ Enhanc.

IXTQ150N06P - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID=150A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :.

IXTQ152N085T - N-Channel MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH152N085T IXTQ152N085T VDSS ID25 RDS(on) .

IXTQ152N085T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max) ·Fast Switc.

IXTQ100N25P - N-Channel MOSFET (IXYS Corporation)
PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ.

IXTQ102N15T - Power MOSFET (IXYS)
Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T.

IXTQ102N15T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Swi.

IXTQ102N20T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2.

IXTQ102N20T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Fast Swi.

Stock and price

IXYS Corporation
MOSFETs 150 Amps 150V 0.013 Rds
Mouser Electronics
IXTQ150N15P
0 In Stock
Qty : 300 units
Unit Price : $6.81
No Longer Stocked
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts