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IXTQ152N085T, IXTH152N085T Datasheet - IXYS Corporation

IXTQ152N085T - N-Channel MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH152N085T IXTQ152N085T VDSS ID25 RDS(on) =8 5 V = 152 A ≤ 7.0 m Ω Symbol V DSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25 °C to 175 °C TJ = 25°C to 175 °C; R GS = 1 M Ω Transient TC = 25 °C Lead Current Limit, RMS TC = 25 °C, pulse width limited by T JM TC = 25°C TC = 25 °C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω

IXTQ152N085T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off

IXTH152N085T-IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXTQ152N085T, IXTH152N085T. Please refer to the document for exact specifications by model.
IXTQ152N085T Datasheet Preview Page 2 IXTQ152N085T Datasheet Preview Page 3

Datasheet Details

Part number:

IXTQ152N085T, IXTH152N085T

Manufacturer:

IXYS Corporation

File Size:

278.82 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTQ152N085T, IXTH152N085T.
Please refer to the document for exact specifications by model.

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