IXTQ130N20T Datasheet - INCHANGE

IXTQ130N20T - N-ChannelMOSFET

IXTQ130N20T Features

* Drain Source Voltage- : VDSS= 200V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max)

* Fast Switching

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Switch-Mode and Resonant-Mode Power

Datasheet Details

IXTQ130N20T

INCHANGE

252.62 KB

N-channelmosfet.

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