Part number:
IXTQ130N10T
Manufacturer:
INCHANGE
File Size:
252.84 KB
Description:
N-channelmosfet.
IXTQ130N10T Datasheet (252.84 KB)
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 9.1mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Switch-Mode and Resonant-Mode Powe
IXTQ130N10T Datasheet (252.84 KB)
IXTQ130N10T
INCHANGE
252.84 KB
N-channelmosfet.
📁 Related Datasheet
IXTQ130N10T - Power MOSFET
(IXYS Corporation)
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH130N10T IXTQ130N10T
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1mΩ
TO-247 (IXTH)
.
IXTQ130N15T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH130N15T IXTQ130N15T
V= DSS
ID25 =
RDS(on) .
IXTQ130N15T - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 12mΩ(Max) ·Fast Swi.
IXTQ130N20T - Power MOSFET
(IXYS)
TrenchTM Power MOSFET
IXTQ130N20T IXTH130N20T
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
Symbol
VDSS VDGR
VGSS VGSM
ID25 I.
IXTQ130N20T - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 16mΩ(Max) ·Fast Swi.
IXTQ100N25P - N-Channel MOSFET
(IXYS Corporation)
PolarHTTM Power MOSFET
IXTK 100N25P IXTQ 100N25P IXTT 100N25P
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 = ≤ RDS(on)
250 V 100 A 27 mΩ.
IXTQ102N15T - Power MOSFET
(IXYS)
Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
T.
IXTQ102N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 18mΩ(Max) ·Fast Swi.
