15N12 Datasheet | Specifications & PDF Download

Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, ty

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HM15N120AT IGBT Features  1200V,15A  VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off w

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW15N120H3 1200V high speed switching

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Preliminary Data Sheet IXSH15N120A IGBT S Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES www.DataShe

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Advanced Technical Information IXRA 15N120 IGBT with Reverse Blocking capability VCES = ±1200 V IC25 = 25 A VCE(sat) typ. = 2.5 V 2 TO-263AB

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HiPerFASTTM IGBT IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE(sat) tfi(typ)

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SEMICONDUCTOR TECHNICAL DATA KGH15N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 120V(Min) ·Static Drain-Source On-Resistance :

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General Description Din-Tek IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such

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SKW15N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous genera

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Soft Switching Series IHW15N120R q C Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low for

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IGBT - Field Stop II NGTB15N120FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct

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Advanced Technical Information IXRP 15N120 IXRA 15N120 www.DataSheet4U.com IGBT with Reverse Blocking capability VCES = ±1200 V IC25 = 25 A VCE(sat

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Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B S Series - Improved SCSOA Capability VCES IC25 VCE(sat) =1200 V = 30

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SEMICONDUCTOR TECHNICAL DATA KGT15N120NDA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ru

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.4V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms KD

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www.DataSheet4U.com FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive tem

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NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior per

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