15N12 Datasheet | Specifications & PDF Download

IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft a

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Advance Technical Information HiPerFASTTM IGBT IXGH15N120B2D1 IXGT15N120B2D1 Optimized for 10-20 KHz hard switching and up to 100 KHz resonant switch

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Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, ty

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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Advance Technical Information HiPerFASTTM IGBT IXGH15N120B2D1 IXGT15N120B2D1 Optimized for 10-20 KHz hard switching and up to 100 KHz resonant switch

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www.DataSheet4U.com FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive tem

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW15N120H3 1200V high speed switching

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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SKW15N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous genera

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SEMICONDUCTOR TECHNICAL DATA KGH15N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 120V(Min) ·Static Drain-Source On-Resistance :

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Soft Switching Series IHW15N120R q C Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low for

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www.DataSheet4U.com FGA15N120AND IGBT FGA15N120AND General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduc

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SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.

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BRG15N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features 、、、RoHS 。 L

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IKW15N120T2 TrenchStop® 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-paralle

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SEMICONDUCTOR TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche rug

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FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT FGA15N120ANTDTU 1200 V, 15 A NPT Trench IGBT Features • NPT Trench Technology, Positive temperature co

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IGBT Lightspeed Series IXGA 15N120C IXGP 15N120C VCES IC25 VCE(sat) tfi(typ) =1200 V = 30 A = 3.8 V = 115 ns Symbol www.DataSheet4U.com V CES Tes

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Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B S Series - Improved SCSOA Capability VCES IC25 VCE(sat) =1200 V = 30

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