isc N-Channel MOSFET Transistor ·FEATURES ·Drai.
Xiner
XNS15N120T - Trench-FS IGBT
Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features Advanced Trench+FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, ty.
Fairchild Semiconductor
FGA15N120ANTD - 1200V NPT Trench IGBT
www.DataSheet4U.com FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive tem.
Infineon
IHW15N120E1 - IGBT
ResonantSoft-SwitchingSeries ReverseconductingIGBTwithmonolithicbodyDiodeforsoft-switching IHW15N120E1 Datasheet IndustrialPowerControl .
KEDA
KDG15N120H - IGBT
IGBT Features 1200V,15A VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A High speed switching Higher system efficiency Soft current turn-off waveforms S.
KEDA
KDG15N120H2 - IGBT
IGBT Features 1200V,15A VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A High speed switching Higher system efficiency Soft current turn-off waveforms S.
Infineon
K15H1203 - IKW15N120H3 IGBT
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode IKW15N120H3 1200Vhighspeedswitching.
BLUE ROCKET ELECTRONICS
BRG15N120D - Insulated-Gate Bipolar Transistor
BRG15N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features 、、、RoHS 。 L.
KEC
15N120NDA - KGH15N120NDA
SEMICONDUCTOR TECHNICAL DATA KGH15N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a.
Infineon Technologies
K15N120 - FAST IGBT IN NPT-TECHNOLOGY
SKW15N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous genera.
Inchange Semiconductor
15N12 - N-Channel Mosfet Transistor
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 120V(Min) ·Static Drain-Source On-Resistance :.
Huajing Microelectronics
BT15N120ANF - Silicon FS Planar IGBT
Silicon FS Planar IGBT BT15N120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120.
Fairchild Semiconductor
FGA15N120ANTDTU - IGBT
FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT FGA15N120ANTDTU 1200 V, 15 A NPT Trench IGBT Features • NPT Trench Technology, Positive temperature co.
IXYS
IXST15N120B - High Voltage IGBT
HIGH Voltage IGBT IXSH 15N120B IXST 15N120B "S" Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 30 A = 1200 V = 3.4 V Preliminary data S.
TRinno
TGAN15N120ND - NPT Trench IGBT
Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • Ro.
IXYS Corporation
IXST15N120BD1 - Improved SCSOA Capability
IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preli.
IXYS Corporation
IXGH15N120BD1 - Low VCE(sat) IGBT
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 VCE(sat) 3.2 V 3.8 V 1200 V 30 A 1200 V .
Infineon Technologies
H20R120 - IHW15N120R
Soft Switching Series IHW15N120R q C Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low for.
KEC
KGH15N120NDA - NPT IGBTs
SEMICONDUCTOR TECHNICAL DATA KGH15N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a.
KEC
KGT15N120NDH - NPT IGBT
SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for so.
mrm
2ZUS15N12E - 2Watt 7-Pin SIL-Package
2 Watt 7 Pin SIL Package Z o Ultra-Miniature Size o Unregulated Output o 1000VDC I/O-Isolation o 2000VDC I/O-Isolation Option (add Suffix "H2") 3.
