15N12 Datasheet | Specifications & PDF Download

www.DataSheet4U.com FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive tem

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SKW15N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous genera

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 120V(Min) ·Static Drain-Source On-Resistance :

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Preliminary Data Sheet IXSH15N120A IGBT S Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES www.DataShe

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Soft Switching Series IHW15N120R q C Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low for

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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SEMICONDUCTOR TECHNICAL DATA KGH15N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a

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www.DataSheet4U.com FGA15N120AND IGBT FGA15N120AND General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduc

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Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B S Series - Improved SCSOA Capability VCES IC25 VCE(sat) =1200 V = 30

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IGBT Lightspeed Series Preliminary data Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ =

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW15N120H3 1200V high speed switching

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SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.

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FGA15N120AN IGBT FGA15N120AN General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losse

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NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior per

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HIGH Voltage IGBT IXSH 15N120B IXST 15N120B S Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 30 A = 1200 V = 3.4 V Preliminary data S

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IGBT - Field Stop II NGTB15N120FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct

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IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward

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Low VCE(sat) IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 VCE(sat) 3.2 V 3.8 V 1200 V 30 A 1200 V

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NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provid

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